10 resultados para Lee-Carter model

em Cambridge University Engineering Department Publications Database


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This paper investigates the interaction of solitary waves (representative of tsunamis) with idealized flat-topped conical islands. The investigation is based on simulations produced by a numerical model that solves the two-dimensional Boussinesq-type equations of Madsen and Sørensen using a total variation diminishing Lax-Wendroff scheme. After verification against published laboratory data on solitary wave run-up at a single island, the numerical model is applied to study the maximum run-up at a pair of identical conical islands located at different spacings apart for various angles of wave attack. The predicted results indicate that the maximum run-up can be attenuated or enhanced according to the position of the second island because of wave refraction, diffraction, and reflection. It is also observed that the local wave height and hence run-up can be amplified at certain gap spacing between the islands, owing to the interference between the incident waves and the reflected waves between islands. © 2012 American Society of Mechanical Engineers.

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The Lateral Leg Spring model (LLS) was developed by Schmitt and Holmes to model the horizontal-plane dynamics of a running cockroach. The model captures several salient features of real insect locomotion, and demonstrates that horizontal plane locomotion can be passively stabilized by a well-tuned mechanical system, thus requiring minimal neural reflexes. We propose two enhancements to the LLS model. First, we derive the dynamical equations for a more flexible placement of the center of pressure (COP), which enables the model to capture the phase relationship between the body orientation and center-of-mass (COM) heading in a simpler manner than previously possible. Second, we propose a reduced LLS "plant model" and biologically inspired control law that enables the model to follow along a virtual wall, much like antenna-based wall following in cockroaches. © 2006 Springer.

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We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.