88 resultados para Laser Ablation

em Cambridge University Engineering Department Publications Database


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This article explores the possibility of using a laser to remove toner-print from office paper. Removal of print would allow paper to be re-used instead of being recycled or disposed into a landfill. This might reduce climate change gas emissions per tonne of office paper by between 45% and 95%. Although there is little previous research on the area, a number of related articles on paper conservation methods using laser radiation can be found in literature. Different authors have studied the effects of laser energy on blank paper and its application for cleaning soiled paper. However, this study examines toner-print removal from paper by laser ablation. In this article a laser in the visible range is applied to a single toner-paper combination with a range of energy fluences. Results are evaluated by means of colour measurements under the L*a*b* colour space and SEM images. Analysis of the samples reveals that there are parameters under which it is possible to remove toner from paper without causing significant discolouration or damage to the substrate. This means that it is technically possible to remove toner-print for paper re-use.

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Optimised ultrafast laser ablation can result in almost complete ionisation of the target material and the formation of a high velocity plasma jet. Collisions with the ambient gas behind the shock front cools the material resulting in the formation of mainly spherical, single crystal nanoscale particles in the condensate. This work characterises the nanoscale structures produced by the ultrafast laser interactions in He atmospheres at STP with Ni and Al. High resolution transmission electron microscopy was employed to study the microstructure of the condensates and to classify the production of particles forms as a function of the illumination conditions.

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Laser ablation of solid Silicon targets using pulsed Yb fiber lasers of pulse duration 1.5-400 ns Yb fiber lasers is studied in this work. Material responses of a range of pulse envelopes are examined including front peak (FP) and double peak (DP) pulses. Theoretical models for the interactions are examined and qualitative explanations of material response experiments are presented.

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Mechanics has an important role during morphogenesis, both in the generation of forces driving cell shape changes and in determining the effective material properties of cells and tissues. Drosophila dorsal closure has emerged as a reference model system for investigating the interplay between tissue mechanics and cellular activity. During dorsal closure, the amnioserosa generates one of the major forces that drive closure through the apical contraction of its constituent cells. We combined quantitation of live data, genetic and mechanical perturbation and cell biology, to investigate how mechanical properties and contraction rate emerge from cytoskeletal activity. We found that a decrease in Myosin phosphorylation induces a fluidization of amnioserosa cells which become more compliant. Conversely, an increase in Myosin phosphorylation and an increase in actin linear polymerization induce a solidification of cells. Contrary to expectation, these two perturbations have an opposite effect on the strain rate of cells during DC. While an increase in actin polymerization increases the contraction rate of amnioserosa cells, an increase in Myosin phosphorylation gives rise to cells that contract very slowly. The quantification of how the perturbation induced by laser ablation decays throughout the tissue revealed that the tissue in these two mutant backgrounds reacts very differently. We suggest that the differences in the strain rate of cells in situations where Myosin activity or actin polymerization is increased arise from changes in how the contractile forces are transmitted and coordinated across the tissue through ECadherin-mediated adhesion. Altogether, our results show that there is an optimal level of Myosin activity to generate efficient contraction and suggest that the architecture of the actin cytoskeleton and the dynamics of adhesion complexes are important parameters for the emergence of coordinated activity throughout the tissue.

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The dramatic increase in hole quality on single crystalline silicon with an 1 μm fiber laser has been reported recently, it redefines the processing options for Si at that wavelength. This study investigated the effects of the MOPA based pulse tuning on the changes of the machined depth and the mass removal mechanism for the generation of microvia holes. Hole depths were measured and surface morphology studied using SEM and optical interferometric profilometry. The pulse peak power was found to strongly influence the material removal mechanism with fixed pulse duration. High peak powers (>1 kW) gave vaporization dominated ablation, left a limited re solidified molten layer and clean hole formation. The pulse duration was found to strongly influence the machined depth. Longer pulse durations generated deeper holes with constant peak power (>1 kW). In comparison with the DPSS UV laser, the IR fiber laser of longer pulse durations machined deeper holes and generated less resolidifed melt beyond the hole rim at high fluencies. The comparison suggests that some applications (microvia drilling) of the DPSS UV laser can be replaced with the more flexible, low cost IR fiber laser. © KSPE and Springer 2012.

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A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650μm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm2 and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 μm was achieved using a 200 ns pulse of 13.3 J/cm 2, giving a maximum machining efficiency of 31.86 μm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.

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Picosecond pulsed laser (10.4 ps, 1064 nm, 5 and 50 kHz) patterning studies were performed, of PEDOT:PSS thin films of varying thickness deposited by spin coating on glass substrates, by ablating the films or by changing locally by laser irradiation the optical and electrical properties of the polymer. From a detailed observation of the morphology of single pulse ablated holes on the surfaces of the films, in combination with simple calculations, it is concluded that photomechanical ablation is the likely ablation mechanism of the films. The single pulse ablation thresholds were measured equal to 0.13-0.18 J/cm 2 for films with thicknesses in the region of ∼100-600 nm. The implications on ablation line patterning of the films using different fluences, scanning speeds and pulse repetition rates, were investigated systematically. Laser irradiation of the films before ablation induces a metal-insulator transition of the polymer because of the formation of charge localization due to a possible creation of molecular disorder in the polymer and shortening of its conjugation length. © 2010 Elsevier B.V. All rights reserved.

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Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.