Influence of voltage and frequency dimming on power losses in HF electronic ballasts for compact fluorescent lamps

Compact Fluorescent Lamps (CFL) incorporating electronic ballasts are widely used in lighting. In many cases the ability to dim the lamp is a requirement Dimming can be achieved by varying the voltage supplied to the inverter or by changing the switching frequency of the inverter. The effect of dimming by both approaches on the power losses in the inverter is studied in this work. The lamp and associated inverter has been modeled in PSPICE, using a behavioral model for the CFL. Predicted losses are in good agreement with experimental data obtained from calorimetry. The model was then used to determine the distribution of losses within the inverter, enabling a comparison of the effects of the two dimming methods to be made. © 2006 IEEE.

Losses in inductor-less piezoelectric transformer ballast for compact fluorescent lamps

In this study an inductor-less piezoelectric transformer (PT) based ballast for a 5 W CFL has been designed and simulated. The predictions of circuit currents and losses closely match experimentally measured values. The total simulated loss figure was confirmed against practically determined losses using a precision mini-calorimeter. Using simulation to disaggregate the total loss figure, it is seen that the PT makes the largest contribution to the total losses in such ballast.

Losses in self-oscillating ballasts for electrode-type compact fluorescent lamps

Commercially available integrated compact fluorescent lamps (CFLs) use self-resonant ballasts on grounds of simplicity and cost. To understand how to improve ballast efficiency, it is necessary to quantify the losses. The losses occurring in these ballasts have been directly measured using a precision mini-calorimeter. In addition, a Pspice model has been used to simulate the performance of an 18 W integrated CFL. The lamp has been represented by a behavioural model and Jiles-Atherton equations were used to model the current transformer core. The total loss is in close agreement with measurements from the mini-calorimeter, confirming the accuracy of the model. The total loss was then disaggregated into component losses by simulation, showing that the output inductor is the primary source of loss, followed by the inverter switches. © 2011 The Institution of Engineering and Technology.

Influence of voltage and frequency dimming on power losses in hf electronic ballasts for compact fluorescent lamps

Compact fluorescent lamps (CFLs) incorporating electronic ballasts are widely used in lighting. In many cases, the ability to dim the lamp is a requirement. Dimming can be achieved by varying the switching frequency of the inverter or by changing the voltage supplied to the inverter. The effect of dimming by both approaches on the power losses in the inverter is studied in this work. The lamp and associated inverter has been modeled in Pspice, using a behavioral model for the CFL. Predicted losses are in good agreement with experimental data obtained from calorimetry. After verification, the model was then used to determine the distribution of losses within the inverter, enabling a comparison of the effects of the two dimming methods to be made. © 2011 IEEE.

Millisecond processing beyond chip technology: From electronics to photonics

There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boronimplanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond range spread out into other fields related to silicon technology and beyond. This paper reports on recent experiments regarding shallow junction engineering in germanium, annealing of ITO layers on glass and plastic foil to form an conductive layer as well as investigations which we did during the last years in the field of wide band gap semiconductor materials (SiC, ZnO). A more common feature evolving from our work was related to the modeling of wafer stress during millisecond thermal processing with flash lamps. Finally recent achievements in the field of silicon-based light emission basing on Metal-Oxide-Semiconductor Light Emitting Devices will be reported. © 2007 IEEE.

Prospects of III-nitride optoelectronics grown on Si.

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.