Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

A systematic study has been made of the growth of both hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiN) by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD). In the case of a-SiN, helium and nitrogen gas is injected into the system such that it passes through the resonance zone. These highly ionised gases provide sufficient energy to ionise the silane gas, which is injected further downstream. It is demonstrated that a gas phase reaction occurs between the silane and nitrogen species. It is control of the ratio of silane to nitrogen in the plasma which is critical for the production of stoichiometric a-SiN. Material has been produced at 80°C with a Si:N ratio of 1:1.3 a breakdown strength of ∼6 MV cm-1 and resistivity of > 1014 Ω cm. In the case of a-Si:H, helium and hydrogen gas is injected into the ECR zone and silane is injected downstream. It is shown that control of the gas phase reactions is critical in this process also. a-Si:H has been deposited at 80 °C with a dark conductivity of 10-11 Ω-1 cm-1 and a photosensitivity of justbelowl 4×104. Such materials are suitable for use in thin film transistors on plastic substrates.

Baroclinic waves in an air-filled thermally driven rotating annulus.

In this study an experimental investigation of baroclinic waves in air in a differentially heated rotating annulus is presented. Air has a Prandtl number of 0.707, which falls within a previously unexplored region of parameter space for baroclinic instability. The flow regimes encountered include steady waves, periodic amplitude vacillations, modulated amplitude vacillations, and either monochromatic or mixed wave number weak waves, the latter being characterized by having amplitudes less than 5% of the applied temperature contrast. The distribution of these flow regimes in parameter space are presented in a regime diagram. It was found that the progression of transitions between different regimes is, as predicted by recent numerical modeling results, in the opposite sense to that usually found in experiments with high Prandtl number liquids. No hysteresis in the flow type, with respect to variations in the rotation rate, was found in this investigation.

HVIC switch for high-frequency power converters

A high voltage integrated circuit (HVIC) switch designed as a building block for power converters operating up to 13.56 MHz from off-line voltages is presented. A CMOS-compatible, 500 V power device process is used to integrate control circuitry with a high-speed MOS gate driver and high voltage lateral power MOSFET. Fabrication of the HVIC switches has proceeded in two stages. The first batch of devices showed switching times of less than 5 ns for the power switch and good high frequency performance of a level-shifter for driving half bridge converters. In the second phase, a switch that monolithically integrates all the elements required to form a complete high-frequency converter has been designed.

Global linear and nonlinear stability of viscous confined plane wakes with co-flow

The global stability of confined uniform density wakes is studied numerically, using two-dimensional linear global modes and nonlinear direct numerical simulations. The wake inflow velocity is varied between different amounts of co-flow (base bleed). In accordance with previous studies, we find that the frequencies of both the most unstable linear and the saturated nonlinear global mode increase with confinement. For wake Reynolds number Re = 100 we find the confinement to be stabilising, decreasing the growth rate of the linear and the saturation amplitude of the nonlinear modes. The dampening effect is connected to the streamwise development of the base flow, and decreases for more parallel flows at higher Re. The linear analysis reveals that the critical wake velocities are almost identical for unconfined and confined wakes at Re ≈ 400. Further, the results are compared with literature data for an inviscid parallel wake. The confined wake is found to be more stable than its inviscid counterpart, whereas the unconfined wake is more unstable than the inviscid wake. The main reason for both is the base flow development. A detailed comparison of the linear and nonlinear results reveals that the most unstable linear global mode gives in all cases an excellent prediction of the initial nonlinear behaviour and therefore the stability boundary. However, the nonlinear saturated state is different, mainly for higher Re. For Re = 100, the saturated frequency differs less than 5% from the linear frequency, and trends regarding confinement observed in the linear analysis are confirmed.

On the application of LES to seal geometries

Five Large Eddy Simulation (LES) and hybrid RANS-NLES (Reynolds-Averaged Navier-Stokes-Numerical-LES) methods are used to simulate flow through a labyrinth seal geometry and are contrasted with RANS solutions. Results show that LES and RANS-NLES is capable of accurately predicting flow behaviour of two seal flows with a scatter of less than 5 %. RANS solutions show the potential to perform poorly for the turbulence models tested. LES and hybrid RANS-NLES are found to be consistent and in agreement with measurements, providing a flexible numerical platform for design investigations. It also allows greater flow physics insights. © Springer Science+Business Media Dordrecht 2013.

Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition

Vertically aligned carbon nanotubes were grown at temperatures as low as 120degreesC by plasma-enhanced chemical vapor deposition. A systematic study of the temperature dependence of the growth rate and the structure of the as-grown nanotubes is presented using a C2H2/NH3 system and nickel as the catalyst. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapor deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result could allow direct growth of nanotubes onto low-temperature substrates like plastics, and facilitate the integration in sensitive nanoelectronic devices. (C) 2003 American Institute of Physics.

Uplift resistance of buried pipelines at low cover-diameter ratios

Reliable estimates for the maximum available uplift resistance from the backfill soil are essential to prevent upheaval buckling of buried pipelines. The current design code DNV RP F110 does not offer guidance on how to predict the uplift resistance when the cover:pipe diameter (H/D) ratio is less than 2. Hence the current industry practice is to discount the shear contribution from uplift resitance for design scenarios with H/D ratios less than 1. The necessity of this extra conservatism is assessed through a series of full-scale and centrifuge tests, 21 in total, at the Schofield Centre, University of Cambridge. Backfill types include saturated loose sand, saturated dense sand and dry gravel. Data revealed that the Vertical Slip Surface Model remains applicable for design scenarios in loose sand, dense sand and gravel with H/D ratios less than 1, and that there is no evidence that the contribution from shear should be ignored at these low H/D ratios. For uplift events in gravel, the shear component seems reliable if the cover is more than 1-2 times the average particle size (D50), and more research effort is currenty being carried out to verify this conclusion. Strain analysis from the Particle Image Velocimetry (PIV) technique proves that the Vertical Slip Surface Model is a good representation of the true uplift deformation mechanism in loose sand at H/D ratios between 0.5 and 3.5. At very low H/D ratios (H/D < 0.5), the deformation mechanism is more wedge-like, but the increased contribution from soil weight is likely to be compensated by the reduced shear contributions. Hence the design equation based on the Vertical Slip Surface Model still produces good estimates for the maximum available uplift resistance. The evolution of shear strain field from PIV analysis provides useful insight into how uplift resistance is mobilized as the uplift event progresses. Copyright 2010, Offshore Technology Conference.