26 resultados para International Film festival

em Cambridge University Engineering Department Publications Database


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Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

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CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

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For Micro-electro-mechanical System (MEMS) applications, TiNi-based thin film Shape Memory Alloys (SMAs) possess many desirable properties, such as high power density, large transformation stress and strain upon heating and cooling, superelasticity and biocompatibility. In this paper, recent development in TiNi-based thin film SMA and microactuator applications is discussed. The topics related to film deposition and characterisation is mainly focused on crystal nucleation and growth during annealing, film thickness effect, film texture, stress induced surface relief, wrinkling and trenches as well as Temperature Memory Effect (TME). The microactuator applications are mainly focused on microvalve and microcage for biological applications, micromirror for optical applications and data storage using nanoindentation method. Copyright © 2009, Inderscience Publishers.