Influence of surfactant solubility on the deformation and breakup of a bubble or capillary jet in a viscous fluid

In a previous study [M. Hameed, J. Fluid Mech. 594, 307 (2008)] the authors investigated the influence of insoluble surfactant on the evolution of a stretched, inviscid bubble surrounded by a viscous fluid via direct numerical simulation of the Navier-Stokes equations, and showed that the presence of surfactant can cause the bubble to contract and form a quasisteady slender thread connecting parent bubbles, instead of proceeding directly toward pinch-off as occurs for a surfactant-free bubble. Insoluble surfactant significantly retards pinch-off and the thread is stabilized by a balance between internal pressure and reduced capillary pressure due to a high concentration of surfactant that develops during the initial stage of contraction. In the present study we investigate the influence of surfactant solubility on thread formation. The adsorption-desorption kinetics for solubility is in the diffusion controlled regime. A long-wave model for the evolution of a capillary jet is also studied in the Stokes flow limit, and shows dynamics that are similar to those of the evolving bubble. With soluble surfactant, depending on parameter values, a slender thread forms but can pinch-off later due to exchange of surfactant between the interface and exterior bulk flow. © 2009 American Institute of Physics.

The influence of corrosion on the erosion of aluminium by aqueous silica slurries

The slurry erosion-corrosion behaviour of aluminium in aqueous silica slurries containing 0.5 M NaCl, acetic acid and 0.1 M Na2CO3 at open circuit has been investigated using a modified slurry erosion rig. The erosion rates of aluminium in the NaCl and acetic acid slurries were much higher than those in an aqueous slurry without electrolyte additives even though the pure corrosion component was very small. Eroded specimens were examined by scanning electron and optical microscopy. In pure aqueous slurry erosion, the basic mechanism leading to mass loss was the ductile fracture of flakes formed on the eroded surface. In corrosive slurries, however, the mass loss was enhanced by cracking of the flakes induced by stress and corrosion. © 1995.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.