21 resultados para Implantation de programme

em Cambridge University Engineering Department Publications Database


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Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.

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An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

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As with all Cambridge teaching, the Cambridge Manufacturing Leaders' Programme is based on one-to-one tutorial supervision, comprising guidance throughout a major strategic development project in the programme participant's company, interspersed with reflective study time spent in Cambridge. In this paper a description of the course is set in a wider philosophical context, looking at the role of work in a personal developmental sense, and the responsibility carried by manufacturing leaders for shaping and guiding that process. It is shown that the programme is rooted in and embodies important aspects of our European heritage regarding work as a learning process and the master/apprentice relationship as a way of giving educational guidance.