Mix design, mechanical properties and impact resistance of UHPFRCCs

The research work focused on the determination of guidelines for the production of an UHPFRCC, and the experimental investigation of the quality and the behaviour of this material in a highly demanding application, such as the impact resistance of structures. Specifically, the aim of this study is to present the results of an extended work on the development of an UHPFRCC and the experimental determination of the mechanical properties of the produced material. Furthermore, the paper will present preliminary experimental results on the impact resistance of Reinforced Concrete and UHPFRCC slab specimens. © 2012 Taylor & Francis Group.

Impact of mode localization on the motional resistance of coupled MEMS resonators

This paper investigates the effect of mode-localization that arises from structural asymmetry induced by manufacturing tolerances in mechanically coupled, electrically transduced Si MEMS resonators. We demonstrate that in the case of such mechanically coupled resonators, the achievable series motional resistance (R x) is dependent not only on the quality factor (Q) but also on the variations in the eigenvector of the chosen mode of vibration induced by mode localization due to manufacturing tolerances during the fabrication process. We study this effect of mode-localization both theoretically and experimentally in two pairs of coupled double-ended tuning fork resonators with different levels of initial structural asymmetry. The measured series R x is minimal when the system is close to perfect symmetry and any deviation from structural symmetry induced by fabrication tolerances leads to a degradation in the effective R x. Mechanical tuning experiments of the stiffness of one of the coupled resonators was also conducted to study variations in R x as a function of structural asymmetry within the system, the results of which demonstrated consistent variations in motional resistance with predictions. © 2012 IEEE.

Numerical study of the impact of process variations on the motional resistance of weakly coupled MEMS resonators

This paper presents a numerical study of the impact of process-induced variations on the achievable motional resistance Rx of one-dimensional, cyclic and cross-coupled architectures of electrostatically transduced MEMS resonators operating in the 250 kHz range. Monte Carlo numerical simulations which accounted for up to 0.75% variation in critical resonator feature sizes were initiated on 1, 2, 3, 4, 5 and 9 coupled MEMS resonators for three distinct coupling architectures. Improvements of 100X in the spread of Rx and 2.7X in mean achievable Rx are reported for the case of 9 resonators when implemented in the cross-coupled topology, as opposed to the traditional one-dimensional chain. © 2013 IEEE.

Resistance of cast polyurethane elastomers to solid particle erosion

The rates of erosive wear have been measured for a series of eight polyester-based one-component castable polyurethane elastomers, with widely varying mechanical properties. Erosion tests were conducted with airborne silica sand, 120μm in particle size, at an impact velocity of 50 ms-1 and impact angles of 30° and 90°. For these materials, which all showed similar values of rebound resilience, the erosion rate increased with increasing hardness, tensile modulus and tensile strength. These findings are at variance with those expected for wear by abrasion, perhaps because of differences in the strain rate or strain levels imposed on the elastomer during erosion and abrasion.

Method for determining erosion resistance of fibre-insulating materials

A method was developed for the estimation of the erosive wear of fiber-insulating materials. The wear increases with increasing impact velocity of the particles, increasing impact angle, particle size and the thermal ageing of the fibre elements. Through CFD simulation of the particle-containing gas flow, the erosion depth can be predicted.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.