Surface attachment of protein fibrils via covalent modification strategies.

Chemical control of surface functionality and topography is an essential requirement for many technological purposes. In particular, the covalent attachment of monomeric proteins to surfaces has been the object of intense studies in recent years, for applications as varied as electrochemistry, immuno-sensing, and the production of biocompatible coatings. Little is known, however, about the characteristics and requirements underlying surface attachment of supramolecular protein nanostructures. Amyloid fibrils formed by the self-assembly of peptide and protein molecules represent one important class of such structures. These highly organized beta-sheet-rich assemblies are a hallmark of a range of neurodegenerative disorders, including Alzheimer's disease and type II diabetes, but recent findings suggest that they have much broader significance, potentially representing the global free energy minima of the energy landscapes of proteins and having potential applications in material science. In this paper, we describe strategies for attaching amyloid fibrils formed from different proteins to gold surfaces under different solution conditions. Our methods involve the reaction of sulfur containing small molecules (cystamine and 2-iminothiolane) with the amyloid fibrils, enabling their covalent linkage to gold surfaces. We demonstrate that irreversible attachment using these approaches makes possible quantitative analysis of experiments using biosensor techniques, such as quartz crystal microbalance (QCM) assays that are revolutionizing our understanding of the mechanisms of amyloid growth and the factors that determine its kinetic behavior. Moreover, our results shed light on the nature and relative importance of covalent versus noncovalent forces acting on protein superstructures at metal surfaces.

Zinc oxide nanowire networks for macroelectronic devices

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics. © 2009 American Institute of Physics.

Raman Spectrum of silicon nanowires

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires (SiNWs). We show how previous reports of phonon confinement in SiNWs and nanostructures are actually inconsistent with phonon confinement, but are due to the intense local heating caused by the laser power used for Raman measurements. This is peculiar to nanostructures, and would require orders of magnitude higher power in bulk Si. By varying the temperature, power and excitation energy, we identify the contributions of pure confinement, heating and carrier photo-excitation. After eliminating laser-related effects, the Raman spectra show confinement signatures typical of quantum wires. © 2003 Elsevier B.V. All rights reserved.

Raman spectroscopy of silicon nanowires

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how previous spectra were inconsistent with phonon confinement, but were due to intense local heating caused by the laser. This is peculiar to nanostructures, and would require orders of magnitude more power in bulk Si. By working at very low laser powers, we identify the contribution of pure confinement typical of quantum wires.