5 resultados para Hydrothermal calcite

em Cambridge University Engineering Department Publications Database


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Controlling the growth of ZnO nanostructures for photovoltaic applications will ensure greater device efficiency and parameter control. This paper reports on methods to engineer the morphology and tailor the nanostructure growth direction through the hydrothermal synthesis method. Effective control is achieved through the use of a sputtered zinc layer together with modifications of the growth solution. These nanostructures have been developed with a view to incorporation into excitonic solar cells, and methods to improve surface stability using a fully aqueous synthesis method will be discussed. © by Oldenbourg Wissenschaftsverlag, München.

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The use of microbial induced precipitation as a soil improvement technique has been growing in geotechnical domains where ureolytic bacteria that raise the pH of the system and induce calcium carbonate (CaCO3) precipitation are used. For many applications, it is useful to assess the degree of CaCO 3 precipitation by non-destructive testing. This study investigates the feasibility of S-wave velocity measurements to evaluate the amount of calcite precipitation by laboratory testing. Two sets of cemented specimen were tested. The first were samples terminated at different stages of cementation. The second were samples that went through different chemical treatments. These variations were made to find out if these factors would affect the S-wave velocity- cementation relationship. If chemical reaction efficiency was assumed to be constant throughout each test, the relationship between S-wave velocity (Vs) and the amount of CaCO3 precipitation was found to be approximately linear. This correlation between S-wave velocity and calcium carbonate precipitation validates its use as an indicator of the amount of calcite precipitation © 2011 ASCE.

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Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.