Scanning gate microscopy of current-annealed single layer graphene

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP. © 2010 American Institute of Physics.

Mechanically tunable conjugated polymer distributed feedback lasers

Herein we report a low-threshold organic laser device based on semiconducting poly(9, 9′ -dioctylfluoren-2,7-diyl-alt-benzothiadiazole) (F8BT) encapsulated in a mechanically stretchable polydimethylsiloxane (PDMS) matrix. We take advantage of the natural flexibility of PDMS to alter the periodicity of the distributed feedback grating which in turn tunes the gain wavelength at which the resonant feedback is obtained. This way, we demonstrate that low-threshold lasing [6.1 μJ cm-2 (5.3 nJ)] is maintained over a large stretching range of 0%-7% which translates into a tuning range of about 20 nm. © 2010 American Institute of Physics.

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers with prepatterned catalysts with horizontal alignment in the gas flow direction. Subsequent wetting-induced compaction by isopropanol increases the nanotube density by one order of magnitude. The actuation voltage of 6 V is low for a NEMS device, and corresponds to CNT arrays with an equivalent Young's modulus of 4.5-8.5 GPa, and resistivity of under 0.0077 Ω·cm. The high frequency characterization shows an isolation of -10 dB at 5 GHz. © 2010 American Institute of Physics.

Passively harmonically mode-locked vertical-external-cavity surface-emitting laser emitting 1.1 ps pulses at 147 GHz repetition rate

Coupled-cavity passive harmonic mode-locking of a quantum well based vertical-external-cavity surface-emitting laser has been demonstrated, yielding an output pulse train of 1.5 ps pulses at a repetition rate of 80 GHz and with an average power of 80 mW. Harmonic mode-locking results from coupling between the main laser cavity and a cavity formed within the substrate of the saturable absorber structure. Mode-locking on the second harmonic of the substrate cavity allows a train of 1.1 ps pulses to be generated at a repetition rate of 147 GHz with 40 mW average power. © 2010 American Institute of Physics.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Persistent photoconductivity in Hf-In-Zn-O thin film transistors

Passivated Hf-In-Zn-O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin of the PPC following observations of its temperature- and wavelength-dependence. This is further corroborated by the photoluminescence spectrum of the HIZO. We also show that the gate voltage can control the decay of PPC in the dark, giving rise to a memory action. © 2010 American Institute of Physics.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

Building flexible user interfaces for solving PDEs

FEniCS is a collection of software tools for the automated solution of differential equations by finite element methods. In this note, we describe how FEniCS can be used to solve a simple nonlinear model problem with varying levels of automation. At one extreme, FEniCS provides tools for the fully automated and adaptive solution of nonlinear partial differential equations. At the other extreme, FEniCS provides a range of tools that allow the computational scientist to experiment with novel solution algorithms. © 2010 American Institute of Physics.

Design, development, and evaluation of a simple blackbody radiative source

This paper presents a simple design and the testing of a blackbody prototype. The physical properties and geometry of the cavity produce a radiator or blackbody with an emissivity greater than 0.99. The prototype has the advantages of having a traditional spherical cavity made of alumina refractory cement and a radiative emission very close to that of an ideal blackbody. The prototype can be used as a calibration standard for other radiation measuring instruments or sensors. Experimental measurements of radiant flux of the prototype measured with a calibrated infrared radiometer and a wide spectrum radiometer are also presented. The prototype is easy to construct and the material required are available to most research centers, laboratories, industries, and universities. © 2010 American Institute of Physics.

End-of-range defects in germanium and their role in boron deactivation

We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit. © 2010 American Institute of Physics.

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

We experimentally demonstrate a self-aligned approach for the fabrication of nanoscale hybrid silicon-plasmonic waveguide fabricated by local oxidation of silicon (LOCOS). Implementation of the LOCOS technique provides compatibility with standard complementary metal-oxide-semiconductor technology and allows avoiding lateral misalignment between the silicon waveguide and the upper metallic layer. We directly measured the propagation and the coupling loss of the fabricated hybrid waveguide using a near-field scanning optical microscope. The demonstrated structure provides nanoscale confinement of light together with a reasonable propagation length of ∼100 μm. As such, it is expected to become an important building block in future on-chip optoelectronic circuitry. © 2010 American Institute of Physics.

Ultrathin silicon nitride microring resonator for biophotonic applications at 970 nm wavelength

We experimentally demonstrate a high-Q ultrathin silicon nitride microring resonator operating at wavelength of 970 nm that is favorable for large variety of biophotonic applications. Implementation of thin device layer of 200 nm allows enhanced interaction between the optical mode and environment, while still maintaining high quality factor of resonator. In addition, we show the importance of spectral window around 970 nm to improve device sensing capability. © 2010 American Institute of Physics.

Stabilization of a complex perovskite superstructure under ambient conditions: Influence of cation composition and ordering, and evaluation as an SOFC cathode

Ba1.6Ca2.3Y1.1Fe5O13 is an Fe3+ oxide adopting a complex perovskite superstructure, which is an ordered intergrowth between the Ca2Fe2O5 and YBa2Fe3O8 structures featuring octahedral, square pyramidal, and tetrahedral B sites and three distinct A site environments. The distribution of A site cations was evaluated by combined neutron and X-ray powder diffraction. Consistent with the Fe3+ charge state, the material is an antiferromagnetic insulator with a Néel temperature of 480-485 °C and has a relatively low d.c. conductivity of 2.06 S cm-1 at 700 °C. The observed area specific resistance in symmetrical cell cathodes with the samarium-doped ceria electrolyte is 0.87 Ω cm2 at 700 °C, consistent with the square pyramidal Fe3+ layer favoring oxide ion formation and mobility in the oxygen reduction reaction. Density functional theory calculations reveal factors favoring the observed cation ordering and its influence on the electronic structure, in particular the frontier occupied and unoccupied electronic states. © 2010 American Chemical Society.