5 resultados para HZSM-5-based catalysts

em Cambridge University Engineering Department Publications Database


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Local measurements of the heat transfer coefficient and pressure coefficient were conducted on the tip and near tip region of a generic turbine blade in a five-blade linear cascade. Two tip clearance gaps were used: 1.6% and 2.8% chord. Data was obtained at a Reynolds number of 2.3 × 10 5 based on exit velocity and chord. Three different tip geometries were investigated: a flat (plain) tip, a suction-side squealer, and a cavity squealer. The experiments reveal that the flow through the plain gap is dominated by flow separation at the pressure-side edge and that the highest levels of heat transfer are located where the flow reattaches on the tip surface. High heat transfer is also measured at locations where the tip-leakage vortex has impinged onto the suction surface of the aerofoil. The experiments are supported by flow visualisation computed using the CFX CFD code which has provided insight into the fluid dynamics within the gap. The suction-side and cavity squealers are shown to reduce the heat transfer in the gap but high levels of heat transfer are associated with locations of impingement, identified using the flow visualisation and aerodynamic data. Film cooling is introduced on the plain tip at locations near the pressure-side edge within the separated region and a net heat flux reduction analysis is used to quantify the performance of the successful cooling design. copyright © 2005 by ASME.

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We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers with prepatterned catalysts with horizontal alignment in the gas flow direction. Subsequent wetting-induced compaction by isopropanol increases the nanotube density by one order of magnitude. The actuation voltage of 6 V is low for a NEMS device, and corresponds to CNT arrays with an equivalent Young's modulus of 4.5-8.5 GPa, and resistivity of under 0.0077 Ω·cm. The high frequency characterization shows an isolation of -10 dB at 5 GHz. © 2010 American Institute of Physics.

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A critical element for the successful growth of GaN device layers on Si is accurate control of the AlGaN buffer layers used to manage strain. Here we present a method for measuring the composition of the AlGaN buffer layers in device structures which makes use of a one-dimensional x-ray detector to provide efficient measurement of a reciprocal space map which covers the full compositional range from AlN to GaN. Combining this with a suitable x-ray reflection with low strain sensitivity it is possible to accurately determine the Al fraction of the buffer layers independent of their relaxation state. © 2013 IOP Publishing Ltd.