SOI diode temperature sensor operated at ultra high temperatures-a critical analysis

This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250°C). A low leakage Silicon On Insulator (SOI) diode was designed and fabricated in a 1 μm CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters, IR detectors, or thermal flow sensors. A CMOS compatible micro-heater was integrated with the diode for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We have proven experimentally that the maximum temperature can be as high as 550°C. Long term continuous operation at high temperatures (400°C) showed good stability of the voltage drop. Furthermore, we carried out a detailed theoretical analysis to determine the maximum operating temperature and exlain the presence of nonlinearity factors at ultra high temperatures. © 2008 IEEE.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Feasibility of AlGaInAs lasers for high speed uncooled communication systems

The feasibility of using AlGaInAs lasers for high-speed modulation at high temperatures was evaluated and compared with performance of GaInAsP devices. Both drift-diffusion and rate equation simulation were involved so that the temperature dependence of material parameters was found in terms of overall dynamic performance. Differential gain was estimated by means of drift-diffusion simulations.

A high temperature SOI CMOS NO2 sensor

For more than 20 years researchers have been interested in developing micro-gas sensors based on silicon technology. Most of the reported devices are based on micro-hotplates, however they use materials that are not CMOS compatible, and therefore are not suitable for large volume manufacturing. Furthermore, they do not allow the circuitry to be integrated on to the chip. CMOS compatible devices have been previously reported. However, these use polysilicon as the heater material, which has long term stability problems at high temperatures. Here we present low power, low cost SOI CMOS NO2 sensors, based on high stability single crystal silicon P+ micro-heaters platforms, capable of measuring gas concentrations down to 0.1 ppm. We have integrated a thin tungsten molybdenum oxide layer as a sensing material with a foundry-standard SOI CMOS micro-hotplate and tested this to NO2. We believe these devices have the potential for use as robust, very low power consumption, low cost gas sensors. © 2011 American Institute of Physics.

A high performance oxygen storage material for chemical looping processes with CO2 capture

Chemical looping combustion (CLC) is a novel combustion technology that involves cyclic reduction and oxidation of oxygen storage materials to provide oxygen for the combustion of fuels to CO2 and H2O, whilst giving a pure stream of CO2 suitable for sequestration or utilisation. Here, we report a method for preparing of oxygen storage materials from layered double hydroxides (LDHs) precursors and demonstrate their applications in the CLC process. The LDHs precursor enables homogeneous mixing of elements at the molecular level, giving a high degree of dispersion and high-loading of active metal oxide in the support after calcination. Using a Cu-Al LDH precursor as a prototype, we demonstrate that rational design of oxygen storage materials by material chemistry significantly improved the reactivity and stability in the high temperature redox cycles. We discovered that the presence of sodium-containing species were effective in inhibiting the formation of copper aluminates (CuAl2O4 or CuAlO 2) and stabilising the copper phase in an amorphous support over multiple redox cycles. A representative nanostructured Cu-based oxygen storage material derived from the LDH precursor showed stable gaseous O2 release capacity (∼5 wt%), stable oxygen storage capacity (∼12 wt%), and stable reaction rates during reversible phase changes between CuO-Cu 2O-Cu at high temperatures (800-1000 °C). We anticipate that the strategy can be extended to manufacture a variety of metal oxide composites for applications in novel high temperature looping cycles for clean energy production and CO2 capture. © The Royal Society of Chemistry 2013.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Gas properties as a limit to gas turbine performance

Although increasing the turbine inlet temperature has traditionally proved the surest way to increase cycle efficiency, recent work suggests that the performance of future gas turbines may be limited by increased cooling flows and losses. Another limiting scenario concerns the effect on cycle performance of real gas properties at high temperatures. Cycle calculations of uncooled gas turbines show that when gas properties are modelled accurately, the variation of cycle efficiency with turbine inlet temperature at constant pressure ratio exhibits a maximum at temperatures well below the stoichiometric limit. Furthermore, the temperature at the maximum decreases with increasing compressor and turbine polytropic efficiency. This behaviour is examined in the context of a two-component model of the working fluid. The dominant influences come from the change of composition of the combustion products with varying air/fuel ratio (particularly the contribution from the water vapour) together with the temperature variation of the specific heat capacity of air. There are implications for future industrial development programmes, particularly in the context of advanced mixed gas-steam cycles.

Aromaticity on the fly: cyclic transition state stabilization at finite temperature.

We study the transition state of pericyclic reactions at elevated temperature with unbiased ab initio molecular dynamics. We find that the transition state of the intramolecular rearrangements for barbaralane and bullvalene remains aromatic at high temperature despite the significant thermal atomic motions. Structural, magnetic, and electronic properties of the dynamical transition state show the concertedness and aromatic character. Free-energy calculations also support the validity of the transition state theory for the present rearrangement reactions. The calculations demonstrate that cyclic delocalization represents a strong force to synchronize the thermal atomic motions even at high temperatures.

Magnetocaloric effect and magnetic properties of Tb0.9 Sn0.1 MnO3

The magnetocaloric effect in magnetic materials is of great interest nowadays. In this article we present an investigation about the magnetic properties near the magnetic transition in a polycrystalline sample of a manganite Tb0.9 Sn0.1 MnO3. Particularly, we are interested in describing the nature of the magnetic interactions and the magnetocaloric effect in this compound. The temperature dependence of the magnetization was measured to determine the characteristics of the magnetic transition and the magnetic entropy change was calculated from magnetization curves at different temperatures. The magnetic solid is paramagnetic at high temperatures. We observe a dominant antiferromagnetic interaction below Tn =38 K for low applied magnetic fields; the presence of Sn doping in this compound decreases the Ńel temperature of the pure TbMnO3 system. A drastic increase in the magnetization as a function of temperature near the magnetic transition suggests a strong magnetocaloric effect. We found a large magnetic entropy change Δ SM (T) of about -4 J/kg K at H=3 T. We believe that the magnetic entropy change is associated with the magnetic transition and we interpret it as due to the coupling between the magnetic field and the spin ordering. This relatively large value and broad temperature interval (about 35 K) of the magnetocaloric effect make the present compound a promising candidate for magnetic refrigerators at low temperatures. © 2007 American Institute of Physics.

Thermo-optical characterization of fluorescent rhodamine B based temperature-sensitive nanosensors using a CMOS MEMS micro-hotplate

A custom designed microelectromechanical systems (MEMS) micro-hotplate, capable of operating at high temperatures (up to 700 C), was used to thermo-optically characterize fluorescent temperature-sensitive nanosensors. The nanosensors, 550 nm in diameter, are composed of temperature-sensitive rhodamine B (RhB) fluorophore which was conjugated to an inert silica sol-gel matrix. Temperature-sensitive nanosensors were dispersed and dried across the surface of the MEMS micro-hotplate, which was mounted in the slide holder of a fluorescence confocal microscope. Through electrical control of the MEMS micro-hotplate, temperature induced changes in fluorescence intensity of the nanosensors was measured over a wide temperature range. The fluorescence response of all nanosensors dispersed across the surface of the MEMS device was found to decrease in an exponential manner by 94%, when the temperature was increased from 25 C to 145 C. The fluorescence response of all dispersed nanosensors across the whole surface of the MEMS device and individual nanosensors, using line profile analysis, were not statistically different (p < 0.05). The MEMS device used for this study could prove to be a reliable, low cost, low power and high temperature micro-hotplate for the thermo-optical characterisation of sub-micron sized particles. The temperature-sensitive nanosensors could find potential application in the measurement of temperature in biological and micro-electrical systems. The Authors. © 2013 Published by Elsevier B.V. All rights reserved.