Sensor graphs for guaranteed cooperative localization performance

A group of mobile robots can localize cooperatively, using relative position and absolute orientation measurements, fused through an extended Kalman filter (ekf). The topology of the graph of relative measurements is known to affect the steady-state value of the position error covariance matrix. Classes of sensor graphs are identified, for which tight bounds for the trace of the covariance matrix can be obtained based on the algebraic properties of the underlying relative measurement graph. The string and the star graph topologies are considered, and the explicit form of the eigenvalues of error covariance matrix is given. More general sensor graph topologies are considered as combinations of the string and star topologies, when additional edges are added. It is demonstrated how the addition of edges increases the trace of the steady-state value of the position error covariance matrix, and the theoretical predictions are verified through simulation analysis.

Design and optimization of planar mesa termination for diamond Schottky barrier diodes

In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440 V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide. © 2013 Elsevier B.V.