Long-term changes and variability of monthly extreme temperatures in India

Extreme temperatures are changing worldwide together with changes in the mean temperatures. This study investigates the long-term trends and variations of the monthly maximum and minimum temperatures and their effects on seasonal fluctuations in various climatological regions in India. The magnitude of the trends and their statistical significance were determined by parametric ordinary least square regression techniques and the variations were determined by the respective coefficient of variations. The results showed that the monthly maximum temperature increased, though unevenly, over the last century. Minimum temperature changes were more variable than maximum temperature changes, both temporally and spatially, with results of lesser significance. The results of this study are good indicators of Indian climate variability and its changes over the last century. © Springer-Verlag 2009.

The mechanical integrity of fuel pin cladding in a pulsed-beam accelerator driven subcritical reactor

The Accelerator Driven Subcritical Reactor (ADSR) is one of the reactor designs proposed for future nuclear energy production. Interest in the ADSR arises from its enhanced and intrinsic safety characteristics, as well as its potential ability to utilize the large global reserves of thorium and to burn legacy actinide waste from other reactors and decommissioned nuclear weapons. The ADSR concept is based on the coupling of a particle accelerator and a subcritical core by means of a neutron spallation target interface. One of the candidate accelerator technologies receiving increasing attention, the Fixed Field Alternating Gradient (FFAG) accelerator, generates a pulsed proton beam. This paper investigates the impact of pulsed proton beam operation on the mechanical integrity of the fuel pin cladding. A pulsed beam induces repetitive temperature changes in the reactor core which lead to cyclic thermal stresses in the cladding. To perform the thermal analysis aspects of this study a code that couples the neutron kinetics of a subcritical core to a cylindrical geometry heat transfer model was developed. This code, named PTS-ADS, enables temperature variations in the cladding to be calculated. These results are then used to perform thermal fatigue analysis and to predict the stress-life behaviour of the cladding. © 2011 Elsevier Ltd. All rights reserved.

Dual-mode thin film bulk acoustic wave resonators for parallel sensing of temperature and mass loading.

Thin film bulk acoustic wave resonator (FBAR) devices supporting simultaneously multiple resonance modes have been designed for gravimetric sensing. The mechanism for dual-mode generation within a single device has been discussed, and theoretical calculations based on finite element analysis allowed the fabrication of FBARs whose resonance modes have opposite reactions to temperature changes; one of the modes exhibiting a positive frequency shift for a rise of temperature whilst the other mode exhibits a negative shift. Both modes exhibit negative frequency shift for a mass load and hence by monitoring simultaneously both modes it is possible to distinguish whether a change in the resonance frequency is due to a mass load or temperature variation (or a combination of both), avoiding false positive/negative responses in gravimetric sensing without the need of additional reference devices or complex electronics.

Dual-mode thin film bulk acoustic wave resonators for parallel sensing of temperature and mass loading

Thin film bulk acoustic wave resonator (FBAR) devices supporting simultaneously multiple resonance modes have been designed for gravimetric sensing. The mechanism for dual-mode generation within a single device has been discussed, and theoretical calculations based on finite element analysis allowed the fabrication of FBARs whose resonance modes have opposite reactions to temperature changes; one of the modes exhibiting a positive frequency shift for a rise of temperature whilst the other mode exhibits a negative shift. Both modes exhibit negative frequency shift for a mass load and hence by monitoring simultaneously both modes it is possible to distinguish whether a change in the resonance frequency is due to a mass load or temperature variation (or a combination of both), avoiding false positive/negative responses in gravimetric sensing without the need of additional reference devices or complex electronics. © 2012 Elsevier B.V.

Film bulk acoustic resonator pressure sensor with self temperature reference

A novel film bulk acoustic resonator (FBAR) with two resonant frequencies which have opposite reactions to temperature changes has been designed. The two resonant modes respond differently to changes in temperature and pressure, with the frequency shift being linearly correlated with temperature and pressure changes. By utilizing the FBAR's sealed back trench as a cavity, an on-chip single FBAR sensor suitable for measuring pressure and temperature simultaneously is proposed and demonstrated. The experimental results show that the pressure coefficient of frequency for the lower frequency peak of the FBAR sensors is approximately -17.4 ppm kPa-1, while that for the second peak is approximately -6.1 ppm kPa-1, both of them being much more sensitive than other existing pressure sensors. This dual mode on-chip pressure sensor is simple in structure and operation, can be fabricated at very low cost, and yet requires no specific package, therefore has great potential for applications. © 2012 IOP Publishing Ltd.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.