Directly modulated wavelength-multiplexed integrated microring laser array

The first demonstration of a directly modulated microring laser array is presented for on-off keyed, wavelength- division- multiplexed fiber-optic data transmission. GaInAsP-InP microring resonators oscillating at separate wavelengths in the 1.5-μm band are vertically coupled to a common passive waveguide bus, which is fabricated on the reverse side of the InP membrane. Two microrings defined with radii for a wavelength channel separation of 6 nm have been assessed for both individual and simultaneous operation. Negligible power penalty (<0.2 dB) is observed for wavelength-division-multiplexed operation with and without transmission over a 25-km fiber span in a manner which indicates low crosstalk between the integrated sources. A device area of less than 0.12 mm2 per microring on a common passive bus allows a highly scalable solution for short-reach wavelength-multiplexed links. © 2008 IEEE.

Optically triggered polarisation bistability in GaInAsP twin stripe injection lasers using integrated devices

A bistable polarization switching element and optical triggering source has been produced by etching a facet in a twin stripe semiconductor laser. The switching element is formed by a pair of stripe segments at one end of the device and triggered with short light pulses from the other two segments. Detector limited switching risetimes have been measured at 250 ps.

Efficient InGaAsP/InP multiple quantum well optical phase modulator for the 1.5-1.55μm fiber band

We report an InGaAsP/InP MQW phase modulator operating over the entire 1.55μm fiber band with high phase modulation efficiency and low loss modulation. The spectral dependence of the electro-refraction in a MQW structure is measured for the first time.

Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.

Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.