Automated Computation of the Fundamental Matrix for Vision-Based Construction Site Applications

Estimating the fundamental matrix (F), to determine the epipolar geometry between a pair of images or video frames, is a basic step for a wide variety of vision-based functions used in construction operations, such as camera-pair calibration, automatic progress monitoring, and 3D reconstruction. Currently, robust methods (e.g., SIFT + normalized eight-point algorithm + RANSAC) are widely used in the construction community for this purpose. Although they can provide acceptable accuracy, the significant amount of required computational time impedes their adoption in real-time applications, especially video data analysis with many frames per second. Aiming to overcome this limitation, this paper presents and evaluates the accuracy of a solution to find F by combining the use of two speedy and consistent methods: SURF for the selection of a robust set of point correspondences and the normalized eight-point algorithm. This solution is tested extensively on construction site image pairs including changes in viewpoint, scale, illumination, rotation, and moving objects. The results demonstrate that this method can be used for real-time applications (5 image pairs per second with the resolution of 640 × 480) involving scenes of the built environment.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.