9 resultados para Formation process

em Cambridge University Engineering Department Publications Database


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We demonstrate a controllable formation process of wave-like patterns in thermally unstable surface-capped polymer films on a rigid substrate. Self-ordered wave-like structures over a large area can be created by applying a small lateral tension to the film, whereupon it becomes unstable. A clear mode selection process which includes creation, decay and interference between coexisting waves at different annealing conditions has been observed, which makes it possible to restrain the patterns which are formed finally. Our results provide a clear and new evidence of spinodal behaviour in such a film due to thermal instability. Furthermore, we show that the well-controlled patterns generated in such a process can be used to fabricate nanostructures for various applications.

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We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.

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This paper describes the key features of a seafloor-riser interaction model. The soil is represented in terms of non-linear load-deflection (P- y) relationships, which are also able to account for soil stiffness degradation due to cyclic loading. The analytical framework considers the riser-seafloor interaction problem in terms of a pipe resting on a bed of springs, and requires the iterative solution of a fourth-order ordinary differential equation. A series of simulations is used to illustrate the capabilities of the model. Thanks to the non-linear soil springs with stiffness degradation it is possible to simulate the trench formation process and estimate moments in a riser. Copyright © 2008 by The International Society of Offshore and Polar Engineers (ISOPE).

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In steam power plants condensation already starts in the flow path of the low pressure part of the steam turbine, which leads to a complex three-dimensional two-phase flow. Wetness losses are caused due to thermodynamic and mechanical relaxation processes during condensation and droplet transport. The present investigation focuses on the unsteady effects due to rotor-stator interaction on the droplet formation process. Results of unsteady three dimensional flow simulations of a two-stage steam turbine are presented, whereby this is the first time that non-equilibrium condensation is considered in such simulations. The numerical approach is based on RANS equations, which are extended by a wet steam specific nucleation and droplet growth model. Despite the use of a high performance cluster the unsteady simulation has a considerably high simulation time of approximately 60 days by use of 48 CPUs. © Springer-Verlag Berlin Heidelberg 2012.

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This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.

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Biomineralized composite materials found in nature have a compromise of good mechanical properties and relatively small embodied energies in the process of their formation. The Alternate Soaking Process (ASP) is a laboratory technique that has only recently been applied to replicating composite biomineralization. The nexus of the ASP - heterogeneous nucleation - makes it ideal for replicating biominerals where the mineral is templated onto an organic substrate, such as occurs in avian eggshell. Here we demonstrate the deposition of a calcium carbonate gelatin composite on either glass cover slips or demineralized eggshell membranes using an automated ASP. SEM images and FTIR spectra of the resulting mineral show that by altering the amount of gelatin in the growth solutions the final organic component can be controlled accurately in the range of 1-10%, similar to that of natural eggshell. This study shows for the first time the co-precipitation of a CaCO3 - gelatin composite by an ASP and that the organic fraction of this mineral can be tuned to mimic that of natural biomineralized composites. © 2012 Materials Research Society.

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This paper presents new experimental measurements of spike-type stall inception. The measurements were carried out in the single stage Deverson compressor at the Whittle Laboratory. The primary objective was to characterize the flow field in the tip clearance gap during stall inception using sufficient instrumentation to give high spatial and temporal resolution. Measurements were recorded using arrays of unsteady pressure transducers over the rotor tips and hot-wires in the tip gap. Pre-stall ensemble averaged velocity and pressure maps were obtained as well as pressure contours of the stall event. In order to study the transient inception process in greater detail, vector maps were built up from hundreds of stalling events using a triggering system based on the stalling event itself. The results show an embryonic disturbance starting within the blade passage and leading to the formation of a clear spike. The origins of the spike and its relation to the tip leakage vortex are discussed. It has also been shown that before stall the flow in the blade passage which is most likely to stall is generally more unsteady, from revolution to revolution, than the other passages in the annulus. Copyright © 2012 by ASME.

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This paper presents new experimental measurements of spike-type stall inception. The measurements were carried out in the single stage Deverson compressor at the Whittle Laboratory. The primary objective was to characterize the flow field in the tip clearance gap during stall inception using sufficient instrumentation to give high spatial and temporal resolution. Measurements were recorded using arrays of unsteady pressure transducers over the rotor tips and hot-wires in the tip gap. Prestall ensemble averaged velocity and pressure maps were obtained as well as pressure contours of the stall event. In order to study the transient inception process in greater detail, vector maps were built up from hundreds of stalling events using a triggering system based on the stalling event itself. The results show an embryonic disturbance starting within the blade passage and leading to the formation of a clear spike. The origins of the spike and its relation to the tip leakage vortex are discussed. It has also been shown that before stall, the flow in the blade passage which is most likely to stall is generally more unsteady, from revolution to revolution, than the other passages in the annulus. © 2014 by ASME.

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Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), δ-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni silicides have been formed: NiSi on the gate and δ-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, θ-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from δ-Ni 2Si/Si(1 0 0) interface compared to θ-Ni2Si/Si(1 0 0) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. © 2013 Elsevier B.V. All rights reserved.