Addition of ferromagnetic CoFe2O4 to YBCO thin films for enhanced flux pinning

An attempt has been made to prepare a YBa2Cu3O 7-δ (YBCO) thin film doped with ferromagnetic CoFe 2O4. Transmission electron microscopy of the resultant samples shows, however, that Y(Fe, Co)O3 forms as a nanoparticulate dispersion throughout the film in preference to CoFe2O4, leaving the YBCO yttrium deficient. As a consequence, the superconducting properties of the sample are poor, with a self-field critical current density of just 0.25 MA cm-2. Magnetic measurements indicate however that the Y(Fe, Co)O3 content, together with any other residual phases, is also ferromagnetic, and some interesting features are present in the in-field critical current behaviour, including a reduced dependence on applied field and a strong c-axis peak in the angular dependence. The work points the way towards future attempts utilising YFeO3 as an effective ferromagnetic pinning additive for YBCO. © 2009 Elsevier B.V. All rights reserved.

Growth and magnetic properties of ferromagnetic Co nanorods filled inside carbon nanotubes towards nanoscale spintronics

We synthesize Co nanorod filled inside multi-walled CNTs (MWCNTs) by microwave plasma enhanced chemical vapor deposition (MPECVD) and utilize off-axis electron holography to observe the remanent states of the filled metal nanorod inside MWCNTs at room. The MWCNTs grew up to 100-110 nm in diameter and 1.5-1.7 μm in length. The typical bright-field transmission electron microscope (TEM) images revealed both Co/Pd multisegment nanorod and Co nanorod filled inside MWCNTs on the same substrate. We have also performed energy-dispersive X-ray spectrometer (EDS) measurements to characterize the composition of metal filled inside MWCNTs. Based on high-resolution TEM measurements, we observed the face-centered-cubic (fcc) Co filled inside MWCNT. The component of magnetic induction was then measured to be 1.2±0.1 T, which is lower than the expected saturation magnetization of fcc Co of 1.7 T. The partial oxidation of the ferromagnetic metal during the process and the magnetization direction may play an important role in the determination of the quality of the remanent states. © 2008 IEEE.

The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica.

The usage of semiconductor nanostructures is highly promising for boosting the energy conversion efficiency in photovoltaics technology, but still some of the underlying mechanisms are not well understood at the nanoscale length. Ge quantum dots (QDs) should have a larger absorption and a more efficient quantum confinement effect than Si ones, thus they are good candidate for third-generation solar cells. In this work, Ge QDs embedded in silica matrix have been synthesized through magnetron sputtering deposition and annealing up to 800°C. The thermal evolution of the QD size (2 to 10 nm) has been followed by transmission electron microscopy and X-ray diffraction techniques, evidencing an Ostwald ripening mechanism with a concomitant amorphous-crystalline transition. The optical absorption of Ge nanoclusters has been measured by spectrophotometry analyses, evidencing an optical bandgap of 1.6 eV, unexpectedly independent of the QDs size or of the solid phase (amorphous or crystalline). A simple modeling, based on the Tauc law, shows that the photon absorption has a much larger extent in smaller Ge QDs, being related to the surface extent rather than to the volume. These data are presented and discussed also considering the outcomes for application of Ge nanostructures in photovoltaics.PACS: 81.07.Ta; 78.67.Hc; 68.65.-k.

Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.