Suspended multiwalled carbon nanotubes as self-aligned evaporation masks

We describe the nanofabrication study of self-aligned electrodes on suspended multiwalled carbon nanotube structures. When metal is deposited on a suspended multiwalled carbon nanotube structure, the nanotube acts as an evaporation mask, resulting in the formation of discontinuous electrodes. The metal deposits on the nanotubes are removed with lift-off. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gapped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems.

Self-aligned electrodes for suspended carbon nanotube structures

We report on a study into electrode fabrication for the gate control of carbon nanotubes partially suspended above an oxidised silicon substrate. A fabrication technique has been developed that allows self-aligned side-gate electrodes to be placed with respect to an individual nanotube with a spacing of less than 10 nm. The suspended multi-walled carbon nanotube (MWCNT) is used as an evaporation mask during metal deposition. The metal forms an island on the nanotube, with increasing width as the metal is deposited, forming a wedge shape, so that even thick deposited layers yield islands that remain separated from the metal deposited on the substrate due to shadowing of the evaporation. The island can be removed during lift-off to leave a set of self-aligned electrodes on the substrate. Results show that Cr yields self-aligned side gates with around 90% effectiveness. © 2003 Elsevier Science B.V. All rights reserved.

Self-aligned split gate electrodes fabricated on suspended carbon nanotubes

We describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting in the formation of discontinuous wire deposition. The metal deposits on the nanotubes are removed with lift-off due to the poor adhesion of metal to the nanotube surface. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gaped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems.

Self-aligned split gate electrodes fabricated on suspended carbon nanotubes

We describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting in the formation of discontinuous wire deposition. The metal deposits on the nanotubes are removed with lift-off due to the poor adhesion of metal to the nanotube surface. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gaped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems. © 2003 Materials Research Society.

Silicon pyramids for plasmonic enhanced schottky photodetectors

We demonstrate the design, fabrication and characterization of plasmonic enhanced free space Schottky detector for telecom wavelength. Unique fabrication technique, simulation and measurement results will be presented and discussed. © OSA 2013.

Fabrication of multiwalled carbon nanotube bridges by poly-methylmethacrylate suspended dispersion

Poly-methylmethacrylate suspended dispersion was used to fabricate multiwalled carbon nanotube (MWCNT) bridges. Using this technique, nanotubes could be suspended between metal electrodes without any chemical etching of the substrate. The electrical measurement on suspended MWCNT bridges shows that the room temperature resistance ranges from under a kω to a few Mω.

Fabrication of 25nm wide gold lines using nanometer scale lithography and ionized cluster beam deposition

It becomes increasingly difficult to make continuous metal lines with well defined thickness and edges by the lift-off technique as the line width is decreased. We describe in this paper a technique in which the combination of high resolution electron beam lithography and ionized cluster beam (ICB) deposition has enabled very high quality gold lines ({all equal to}25nm wide) to be obtained on thick single crystal silicon substrates. © 1990.

Fabrication of diamond based schottky barrier diodes with oxide ramp termination

The paper's goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer nonuniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included. © 2007 IEEE.

One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printing

Recent development of solution processable organic semiconductors delineates the emergence of a new generation of air-stable, high performance p- and n-type materials. This makes it indeed possible for printed organic complementary circuits (CMOS) to be used in real applications. The main technical bottleneck for organic CMOS to be adopted as the next generation organic integrated circuit is how to deposit and pattern both p- and n-type semiconductor materials with high resolutions at the same time. It represents a significant technical challenge, especially if it can be done for multiple layers without mask alignment. In this paper, we propose a one-step self-aligned fabrication process which allows the deposition and high resolution patterning of functional layers for both p- and n-channel thin film transistors (TFTs) simultaneously. All the dimensional information of the device components is featured on a single imprinting stamp, and the TFT-channel geometry, electrodes with different work functions, p- and n-type semiconductors and effective gate dimensions can all be accurately defined by one-step imprinting and the subsequent pattern transfer process. As an example, we have demonstrated an organic complementary inverter fabricated by 3D imprinting in combination with inkjet printing and the measured electrical characteristics have validated the feasibility of the novel technique. © 2012 Elsevier B.V. All rights reserved.

Application of gel-casting to the fabrication of 1-3 piezoelectric ceramic-polymer composites for high-frequency ultrasound devices

A modified gel-casting technique was used to fabricate a 1-3 piezoelectric ceramic/polymer composite substrate formed by irregular-shaped pillar arrays of small dimensions and kerfs. This technique involves the polymerization of aqueous piezoelectric (PZT) suspensions with added water-soluble epoxy resin and polyamine-based hardener that lead to high strength, high density and resilient ceramic bodies. Soft micromoulding was used to shape the ceramic segments, and micropillars with lateral features down to 4 m and height-to-width aspect ratios of ∼10 were achieved. The composite exhibited a clear thickness resonance mode at approximately 70 MHz and a k eff ∼ 0.51, demonstrating that the ceramic micropillars possess good electrical properties. Furthermore, gel-casting allows the fabrication of ceramic structures with non-conventional shapes; hence, device design is not limited by the standard fabrication methods. This is of particular benefit for high-frequency transducers where the critical design dimensions are reduced. © 2012 IOP Publishing Ltd.