Electron-beam-induced direct etching of graphene

We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. © 2013 Elsevier Ltd. All rights reserved.

Modelling of settlement induced building damage

This thesis focuses on the modelling of settlement induced damage to masonry buildings. In densely populated areas, the need for new space is nowadays producing a rapid increment of underground excavations. Due to the construction of new metro lines, tunnelling activity in urban areas is growing. One of the consequences is a greater attention to the risk of damage on existing structures. Thus, the assessment of potential damage of surface buildings has become an essential stage in the excavation projects in urban areas (Chapter 1). The current damage risk assessment procedure is based on strong simplifications, which not always lead to conservative results. Object of this thesis is the development of an improved damage classification system, which takes into account the parameters influencing the structural response to settlement, like the non-linear behaviour of masonry and the soil-structure interaction. The methodology used in this research is based on experimental and numerical modelling. The design and execution of an experimental benchmark test representative of the problem allows to identify the principal factors and mechanisms involved. The numerical simulations enable to generalize the results to a broader range of physical scenarios. The methodological choice is based on a critical review of the currently available procedures for the assessment of settlement-induced building damage (Chapter 2). A new experimental test on a 1/10th masonry façade with a rubber base interface is specifically designed to investigate the effect of soil-structure interaction on the tunnelling-induced damage (Chapter 3). The experimental results are used to validate a 2D semi-coupled finite element model for the simulation of the structural response (Chapter 4). The numerical approach, which includes a continuum cracking model for the masonry and a non-linear interface to simulate the soil-structure interaction, is then used to perform a sensitivity study on the effect of openings, material properties, initial damage, initial conditions, normal and shear behaviour of the base interface and applied settlement profile (Chapter 5). The results assess quantitatively the major role played by the normal stiffness of the soil-structure interaction and by the material parameters defining the quasi-brittle masonry behaviour. The limitation of the 2D modelling approach in simulating the progressive 3D displacement field induced by the excavation and the consequent torsional response of the building are overcome by the development of a 3D coupled model of building, foundation, soil and tunnel (Chapter 6). Following the same method applied to the 2D semi-coupled approach, the 3D model is validated through comparison with the monitoring data of a literature case study. The model is then used to carry out a series of parametric analyses on geometrical factors: the aspect ratio of horizontal building dimensions with respect to the tunnel axis direction, the presence of adjacent structures and the position and alignment of the building with respect to the excavation (Chapter 7). The results show the governing effect of the 3D building response, proving the relevance of 3D modelling. Finally, the results from the 2D and 3D parametric analyses are used to set the framework of an overall damage model which correlates the analysed structural features with the risk for the building of being damaged by a certain settlement (Chapter 8). This research therefore provides an increased experimental and numerical understanding of the building response to excavation-induced settlements, and sets the basis for an operational tool for the risk assessment of structural damage (Chapter 9).

Random lasing in a bistable smectic A liquid crystal

In this work, we examine the phenomenon of random lasing from the smectic A liquid crystal phase. We summarise our results to date on random lasing from the smectic A phase including the ability to control the output from the sample using applied electric fields. In addition, diffuse random lasing is demonstrated from the electrohydrodynamic instabilities of a smectic A liquid crystal phase that has been doped with a low concentration of ionic impurities. Using a siloxane-based liquid crystal doped with ionic impurities and a laser dye, nonresonant random laser emission is observed from the highly scattering texture of the smectic A phase which is stable in zero-field. With the application of a low frequency alternating current electric field, turbulence is induced due to motion of the ions. This is accompanied by a decrease in the emission linewidth and an increase in the intensity of the laser emission. The benefit in this case is that a field is not required to maintain the texture as the scattering and homeotropic states are both stable in zero field. This offers a lower power consumption alternative to the electric-field induced static scattering sample.

Effects of parylene-C photooxidation on serum-assisted glial and neuronal patterning.

The increasing use of patterned neural networks in multielectrode arrays and similar devices drives the constant development and evaluation of new biomaterials. Recently, we presented a promising technique to guide neurons and glia reliably and effectively. Parylene-C, a common hydrophobic polymer, was photolithographically patterned on silicon oxide (SiO(2)) and subsequently activated via immersion in serum. In this article, we explore the effects of ultraviolet (UV)-induced oxidation on parylene's ability to pattern neurons and glia. We exposed parylene-C stripe patterns to increasing levels of UV radiation and found a dose-dependent reduction in the total mass of patterned cells, as well as a gradual loss of glial and neuronal conformity to the patterns. In contrast, nonirradiated patterns had superior patterning results and increased presence of cells. The reduced cell adhesion and patterning after the formation of aldehyde and carboxyl groups on UV-radiated parylene-C supports our hypothesis that cell adhesion and growth on parylene is facilitated by hydrophobic adsorption of serum proteins. We conclude that unlike other cell patterning schemes, our technique does not rely on photooxidation of the polymer. Nonetheless, the precise control of oxygenated groups on parylene could pave the way for the differential binding of proteins and other molecules on the surface, aiding in the adhesion of alternative cell types. (c) 2010 Wiley Periodicals, Inc. J Biomed Mater Res, 2010.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼105, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 104 s. © 2014 AIP Publishing LLC.

Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.