Dissipativity characterization of a class of oscillators and networks of oscillators

This paper uses dissipativity theory to provide the system-theoretic description of a basic oscillation mechanism. Elementary input-output tools are then used to prove the existence and stability of limit cycles in these "oscillators". The main benefit of the proposed approach is that it is well suited for the analysis and design of interconnections, thus providing a valuable mathematical tool for the study of networks of coupled oscillators.

Interpreting the input admittance of violins and guitars

The most widespread vibration measurement on musical instrument bodies is of the point mobility at the bridge. Analysis of such measurements is presented, with a view to assessing what range of information could feasibly be extracted from the corpus of data. Analysis approaches include (1) pole-residue extraction; (2) damping trend analysis based on time decay information; (3) statistical estimates based on SEA power-balance and variance theory. Comparative results are shown for some key quantities. Damping trends with frequency are shown to have unexpectedly different forms for violins and for guitars. Linear averaging to estimate the "direct field" component gives a simple and clear visualisation of any local resonance behaviour near the bridge, such as the "bridge hill", and reveals some violins that show a double hill, while viols show only weak hills, and guitars none at all. © S. Hirzel Verlag · EAA.

Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.