Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

169 GHz repetition rate passively harmonically mode-locked VECSEL emitting 265 fs pulses

High repetition rate passively mode-locked sources are of significant interest due to their potential for applications including optical clocking, optical sampling, communications and others. Due to their short excited state lifetimes mode-locked VECSELs are ideally suited to high repetition rate operation, however fundamentally mode-locked quantum well-based VECSELs have not achieved repetition rates above 10 GHz due to the limitations placed on the cavity geometry by the requirement that the saturable absorber saturates more quickly than the gain. This issue has been overcome by the use of quantum dot-based saturable absorbers with lower saturation fluences leading to repetition rates up to 50 GHz, but sub-picosecond pulses have not been achieved at these repetition rates. We present a passively harmonically mode-locked VECSEL emitting pulses of 265 fs duration at a repetition rate of 169 GHz with an output power of 20 mW. The laser is based around an antiresonant 6 quantum well gain sample and is mode-locked using a semiconductor saturable absorber mirror. Harmonic modelocking is achieved by using an intracavity sapphire etalon. The sapphire then acts as a coupled cavity, setting the repetition rate of the laser while still allowing a tight focus on the saturable absorber. RF spectra of the laser output show no peaks at harmonics of the fundamental repetition rate up to 26 GHz, indicating stable harmonic modelocking. Autocorrelations reveal groups of pulses circulating in the cavity as a result of an increased tendency towards Q-switched modelocking due to the low pulse energies.

Energy transfer and enhanced 1.54 μm emission in Erbium-Ytterbium disilicate thin films.

α-(Yb1-xErx)2Si2O7 thin films on Si substrates were synthesized by magnetron co-sputtering. The optical emission from Er3+ ions has been extensively investigated, evidencing the very efficient role of Yb-Er coupling. The energy-transfer coefficient was evaluated for an extended range of Er content (between 0.2 and 16.5 at.%) reaching a maximum value of 2 × 10⁻¹⁶ cm⁻³s⁻¹. The highest photoluminescence emission at 1535 nm is obtained as a result of the best compromise between the number of Yb donors (16.4 at.%) and Er acceptors (1.6 at.%), for which a high population of the first excited state is reached. These results are very promising for the realization of 1.54 μm optical amplifiers on a Si platform.

Intrinsic state lifetimes in Pd103 and Cd106,107

The mean-lifetimes, τ, of various medium-spin excited states in Pd103 and Cd106,107 have been deduced using the Recoil Distance Doppler Shift technique and the Differential Decay Curve Method. In Cd106, the mean-lifetimes of the Iπ=12+ state at Ex=5418 keV and the Iπ=11- state at Ex=4324 keV have been deduced as 11.4(17)ps and 8.2(7)ps, respectively. The associated β2 deformation within the axially-symmetric deformed rotor model for these states are 0.14(1) and 0.14(1), respectively. The β2 deformation of 0.14(1) for the Iπ=12+ state in Cd106 compares with a predicted β2 value from total Routhian surface (TRS) calculations of 0.17. In addition, the mean-lifetimes of the yrast Iπ=152- states in Pd103 (at Ex=1262 keV) and Cd107 (at Ex=1360 keV) have been deduced to be 31.2(44)ps and 31.4(17)ps, respectively, corresponding to β2 values of 0.16(1) and 0.12(1) assuming axial symmetry. Agreement with TRS calculations are good for Pd103 but deviate for that predicted for Cd107. © 2007 The American Physical Society.

Lifetime determination of excited states in106Cd

Two separate experiments using the Differential Decay Curve Method have been performed to extract mean lifetimes of excited states in 106Cd. The medium-spin states of interest were populated by the 98Mo( 12C, 4n) 106Cd reaction performed at the Wright Nuclear Structure Lab., Yale University. From this experiment, two isomeric state mean lifetimes have been deduced. The low-lying states were populated by the 96Mo(13C, 3n)106Cd reaction performed at the Institut für Kernphysik, Universität zu Köln. The mean lifetime of the Iπ = 21 + state was deduced, tentatively, as 16.4(9) ps. This value differs from the previously accepted literature value from Coulomb excitation of 10.43(9) ps.

Local structure of Mn in (La1-xHox) 2/3Ca1/3MnO3 studied by X-ray absorption fine structure

Results of X-ray absorption fine structure measurements in manganites (La1-xHox)2/3Ca1/3MnO3 with 0.15 < x < 0.50 are presented. When LaMnO3 is doped with a, divalent element such as Ca2+, substituting for La3+, holes are induced in the filled Mn d orbitais. This leads to a, strong ferromagnetic coupling between Mn sites. Ca ions in La1-xCa xMnO3 introduce a distortion of the crystal lattice and mixed valence Mn ions (Mn3+ and Mn4+). On the other hand, in manganites (La1-xHox)2/3Ca 1/3MnO3 the substitution of La for Ho causes a lattice distortion and induces a disorder, which reduces a magnetic interaction. The ferromagnetic transition temperature and conductivity decrease very quickly with increasing x. The magnetic and transport properties of compounds depend on the local atomic structure around Mn ions. The information on the bond lengths and Debye-Waller factor are obtained from the extended X-ray absorption fine structure (EXAFS) data analysis. The charge state of Mn is determined from the position of the absorption edge in X-ray absorption near edge structure (XANES) data. XAFS results are in good agreement with magnetic characteristics of the studied materials.

Wave propagation under vertically excited surface foundation

Recently developed equipment allows measurement of the shear modulus of soil in situ as a function of level of strain. In these field experiments, the excitation is applied on the ground surface using large scale shakers, and the response of the soil deposit is recorded through embedded receivers. The focus of this paper is on the simulation of signals which would be recorded at the receiver locations in idealized conditions to provide guidelines on the interpretation of field measurements. Discrete and finite element methods are employed to model one dimensional and three dimensional geometries, respectively, under various lateral boundary conditions. When the first times of arrival are detected by receivers under the vertical impulse, they coincide with the arrival of the P wave, related to the constrained modulus of the material, regardless of lateral boundary conditions. If one considers, on the other hand, phase differences between the motions at two receivers the picture is far more complicated and one would obtain propagation velocities, function of frequency and depth, which do not correspond to either the constrained modulus or Young's modulus. It is thus necessary to apply some care when interpreting the data from field tests based on vertical steady state vibrations. The use of inverse analysis can be considered as a way of extracting the shear modulus of soil from the field test measurements. © 2008 ASCE.

Optimizing the energy offset between dye and hole-transporting material in solid-state dye-sensitized solar cells

The power-conversion efficiency of solid-state dye-sensitized solar cells can be optimized by reducing the energy offset between the highest occupied molecular orbital (HOMO) levels of dye and hole-transporting material (HTM) to minimize the loss-in-potential. Here, we report a study of three novel HTMs with HOMO levels slightly above and below the one of the commonly used HTM 2,2′,7,7′- tetrakis(N,N-di-p-methoxyphenylamino)-9,9′- spirobifluorene (spiro-OMeTAD) to systematically explore this possibility. Using transient absorption spectroscopy and employing the ruthenium based dye Z907 as sensitizer, it is shown that, despite one new HTM showing a 100% hole-transfer yield, all devices based on the new HTMs performed worse than those incorporating spiro-OMeTAD. We further demonstrate that the design of the HTM has an additional impact on the electronic density of states present at the TiO2 electrode surface and hence influences not only hole- but also electron-transfer from the sensitizer. These results provide insight into the complex influence of the HTM on charge transfer and provide guidance for the molecular design of new materials. © 2013 American Chemical Society.

Directly and parametrically excited bi-stable vibration energy harvester for broadband operation

Despite many recent advances, the wide-spread adoption of vibrational energy harvesting has been limited by the low levels of generated output power and confined operational frequency band. Recent work by the authors on parametrically excited harvesters has demonstrated over an order of magnitude power improvement. This paper presents an investigation into the simultaneous employment of both direct and parametric resonance, as well as the incorporation of bi-stability, in an attempt to further improve the mechanical-to-electrical energy conversion efficiency by broadening the output power spectrum. Multiple direct and parametric resonant peaks from a multi-degree-of-freedom system were observed and an accumulative ∼10 Hz half-power bandwidth was recorded for the first 40 Hz. Real vibration data was also employed to analysis the rms power response effectiveness of the proposed system. © 2013 IEEE.

A parametrically excited vibration energy harvester

In the arena of vibration energy harvesting, the key technical challenges continue to be low power density and narrow operational frequency bandwidth. While the convention has relied upon the activation of the fundamental mode of resonance through direct excitation, this article explores a new paradigm through the employment of parametric resonance. Unlike the former, oscillatory amplitude growth is not limited due to linear damping. Therefore, the power output can potentially build up to higher levels. Additionally, it is the onset of non-linearity that eventually limits parametric resonance; hence, this approach can also potentially broaden the operating frequency range. Theoretical prediction and numerical modelling have suggested an order higher in oscillatory amplitude growth. An experimental macro-sized electromagnetic prototype (practical volume of ∼1800 cm3) when driven into parametric resonance, has demonstrated around 50% increase in half power band and an order of magnitude higher peak power density normalised against input acceleration squared (293 μW cm-3 m-2 s4 with 171.5 mW at 0.57 m s-2) in contrast to the same prototype directly driven at fundamental resonance (36.5 μW cm-3 m-2 s4 with 27.75 mW at 0.65 m s-2). This figure suggests promising potentials while comparing with current state-of-the-art macro-sized counterparts, such as Perpetuum's PMG-17 (119 μW cm-3 m-2 s4). © The Author(s) 2013.

Dependence of dye regeneration and charge collection on the pore-filling fraction in solid-state dye-sensitized solar cells

Solid-state dye-sensitized solar cells rely on effective infiltration of a solid-state hole-transporting material into the pores of a nanoporous TiO 2 network to allow for dye regeneration and hole extraction. Using microsecond transient absorption spectroscopy and femtosecond photoluminescence upconversion spectroscopy, the hole-transfer yield from the dye to the hole-transporting material 2,2′,7,7′-tetrakis(N,N-di-p- methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) is shown to rise rapidly with higher pore-filling fractions as the dye-coated pore surface is increasingly covered with hole-transporting material. Once a pore-filling fraction of ≈30% is reached, further increases do not significantly change the hole-transfer yield. Using simple models of infiltration of spiro-OMeTAD into the TiO2 porous network, it is shown that this pore-filling fraction is less than the amount required to cover the dye surface with at least a single layer of hole-transporting material, suggesting that charge diffusion through the dye monolayer network precedes transfer to the hole-transporting material. Comparison of these results with device parameters shows that improvements of the power-conversion efficiency beyond ≈30% pore filling are not caused by a higher hole-transfer yield, but by a higher charge-collection efficiency, which is found to occur in steps. The observed sharp onsets in photocurrent and power-conversion efficiencies with increasing pore-filling fraction correlate well with percolation theory, predicting the points of cohesive pathway formation in successive spiro-OMeTAD layers adhered to the pore walls. From percolation theory it is predicted that, for standard mesoporous TiO2 with 20 nm pore size, the photocurrent should show no further improvement beyond an ≈83% pore-filling fraction. Solid-state dye-sensitized solar cells capable of complete hole transfer with pore-filling fractions as low as ∼30% are demonstrated. Improvements of device efficiencies beyond ∼30% are explained by a stepwise increase in charge-collection efficiency in agreement with percolation theory. Furthermore, it is predicted that, for a 20 nm pore size, the photocurrent reaches a maximum at ∼83% pore-filling fraction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.