Waveguide lasers in Er:Yb-doped phosphate glass fabricated by femtosecond laser writing

Advanced waveguide lasers, operating both in continuous wave and pulsed regimes, have been realized in an active phosphate glass by direct writing with femtosecond laser pulses. Stable single mode operation was obtained; the laser provided more than 50 m W in single longitudinal and transverse mode operation with 21% slope efficiency. Furthermore, by combining a high gain waveguide and an innovated fiber-pigtailed saturable absorber based on carbon nanotubes, a mode-locked ring laser providing transform limited 1.6 ps pulses was demonstrated. © 2007 IEEE.

Mode-locked and single-longitudinal-mode waveguide lasers fabricated by femtosecond laser pulses in Er:Yb-doped phosphate glass

Mode-locked and single-longitudinal-mode waveguide lasers, manufactured by femtosecond laser writing in Er-Yb-doped phosphate glasses, are presented. Transform-limited 1.6-ps pulses and a cw output power exceeding 50 mW have been obtained in the two regimes. © 2007 Optical Society of America.

Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.

Enhanced down conversion of photons emitted by photoexcited Er xY2-xSi2O7 films grown on silicon

Photon cutting with efficiencies up to 400% is demonstrated in Erx Y2-x Si2 O7 films grown on Si and its concentration dependence is analyzed. The cutting is the result of cross-energy-transfer processes occurring within a single rare earth (Er3+) acting as both sensitizer and activator. Similarities with upconversion are revealed and possible applications in solar cells are discussed. © 2010 The American Physical Society.

New approaches for enhancing light emission from Er-based materials and devices

In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron-hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 μm owing to the efficient reduction of the defect density. © 2008 Elsevier B.V. All rights reserved.

Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

Stoichiometric Er silicate thin films, monosilicate (Er2SiO 5) and disilicate (Er2Si2O7), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 °C in oxidizing ambient (O 2) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 °C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er2Si2O7 film annealed at 1200 °C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal. © 2008 IOP Publishing Ltd.

Mode-locked and single-longitudinal-mode waveguide lasers fabricated by femtosecond laser pulses in Er: Yb-doped phosphate glass

Mode-locked and single-longitudinal-mode waveguide lasers, manufactured by femtosecond laser writing in Er-Yb-doped phosphate glasses, are presented. Transform-limited 1.6-ps pulses and a cw output power exceeding 50 mW have been obtained in the two regimes. © 2007 Optical Society of America.