Optical tweezing beam control using liquid crystal adaptive optical elements

Liquid crystal (LC) adaptive optical elements are described, which provide an alternative to existing micropositioning technologies in optical tweezing. A full description of this work is given in [1]. An adaptive LC prism supplies tip/tilt to the phase profile of the trapping beam, giving rise to an available steering radius within the x-y plane of 10 μm. Additionally, a modally addressed adaptive LC lens provides defocus, offering a z-focal range for the trapping site of 100 μm. The result is full three-dimensional positional control of trapped particle(s) using a simple and wholly electronic control system. Compared to competing technologies, these devices provide a lower degree of controllability, but have the advantage of simplicity, cost and light efficiency. Furthermore, due to their birefringence, LC elements offer the opportunity of the creation of dual optical traps with controllable depth and separation.

Integrated ZnO surface acoustic wave microfluidic components for biosensor

This paper describes the novel nanocrystalline film ZnO surface acoustic wave devices, which demonstrate their great potential for the portable disease diagnostic system with integrated functions of microfluidic transport, mixing and biosensing. The devices can be easily integrated with electronic control circuitry and fabricated with low temperature process on Si, glass or even polymer substrates. The liquid convection and internal streaming patterns was easily induced by acoustic wave at signal voltages. With further increase in applied voltage to above 20V, the liquid droplet was pushed forward. Immunoreaction-based bio-detection PSA/ACT, all based on SAW devices on thin film piezoelectric ZnO on Si substrate was demonstrated. © 2009 CBMS.

Liquid crystal multi-mode lenses and axicons based on electronic phase shift control

We report on the principle of operation, construction and testing of a liquid crystal lens which is controlled by distributing voltages across the control electrodes, which are in turn controlled by adjusting the phase of the applied voltages. As well as (positive and negative) defocus, then lenses can be used to control tip/tilt, astigmatism, and to create variable axicons. © 2007 Optical Society of America.

Electronic structure of the layered ferroelectric perovskite SrBi2Ta2O9

The band structure of the Bi layered perovskite SrBi2Ta2O9 (SBT) has been calculated by the tight binding method. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O block. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response of SBT while the ferroelectric response originates from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for the excellent fatigue properties of SBT.

Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.

FPGA, physics-based modeling of IGBT and pin diode for hardware co-simulation of complex power electronic converters and systems

This paper presents the steps and the challenges for implementing analytical, physics-based models for the insulated gate bipolar transistor (IGBT) and the PIN diode in hardware and more specifically in field programmable gate arrays (FPGAs). The models can be utilised in hardware co-simulation of complex power electronic converters and entire power systems in order to reduce the simulation time without compromising the accuracy of results. Such a co-simulation allows reliable prediction of the system's performance as well as accurate investigation of the power devices' behaviour during operation. Ultimately, this will allow application-specific optimisation of the devices' structure, circuit topologies as well as enhancement of the control and/or protection schemes.

Towards a fast electro-thermo-mechanical IGBT/Diode simulation framework for design of reliable power electronic converters

This paper describes a methodology that enables fast and reasonably accurate prediction of the reliability of power electronic modules featuring IGBTs and p-i-n diodes, by taking into account thermo-mechanical failure mechanisms of the devices and their associated packaging. In brief, the proposed simulation framework performs two main tasks which are tightly linked together: (i) the generation of the power devices' transient thermal response for realistic long load cycles and (ii) the prediction of the power modules' lifetime based on the obtained temperature profiles. In doing so the first task employs compact, physics-based device models, power losses lookup tables and polynomials and combined material-failure and thermal modelling, while the second task uses advanced reliability tests for failure mode and time-to-failure estimation. The proposed technique is intended to be utilised as a design/optimisation tool for reliable power electronic converters, since it allows easy and fast investigation of the effects that changes in circuit topology or devices' characteristics and packaging have on the reliability of the employed power electronic modules. © 2012 IEEE.

Optimised IGBT turn-off under active voltage control in PEBB applications

Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force an IGBT to follow a pre-set switching trajectory. Previously, AVC was mainly used for controlling series-connected IGBTs in order to enable voltage balance between IGBTs. In this paper, the nonlinear IGBT turn-off transient is further discussed and the turnoff of a single IGBT under AVC is further optimised in order to meet the demand of Power Electronic Building Block (PEBB) applications. © 2013 IEEE.

Controlled amine functionality in self-assembled monolayers via the hidden amine route: chemical and electronic tunability.

A synthetic strategy for fabricating a dense amine functionalized self-assembled monolayer (SAM) on hydroxylated surfaces is presented. The assembly steps are monitored by X-ray photoelectron spectroscopy, Fourier transform infrared- attenuated total reflection, atomic force microscopy, variable angle spectroscopic ellipsometry, UV-vis surface spectroscopy, contact angle wettability, and contact potential difference measurements. The method applies alkylbromide-trichlorosilane for the fabrication of the SAM followed by surface transformation of the bromine moiety to amine by a two-step procedure: S(N)2 reaction that introduces the hidden amine, phthalimide, followed by the removal of the protecting group and exposing the free amine. The use of phthalimide moiety in the process enabled monitoring the substitution reaction rate on the surface (by absorption spectroscopy) and showed first-order kinetics. The simplicity of the process, nonharsh reagents, and short reaction time allow the use of such SAMs in molecular nanoelectronics applications, where complete control of the used SAM is needed. The different molecular dipole of each step of the process, which is verified by DFT calculations, supports the use of these SAMs as means to tune the electronic properties of semiconductors and for better synergism between SAMs and standard microelectronics processes and devices.