Modeling fatigue crack growth in crystalline solids with discrete dislocation plasticity

Analyses of crack growth under cyclic loading conditions are discussed where plastic flow arises from the motion of large numbers of discrete dislocations and the fracture properties are embedded in a cohesive surface constitutive relation. The formulation is the same as used to analyse crack growth under monotonic loading conditions, differing only in the remote loading being a cyclic function of time. Fatigue, i.e. crack growth in cyclic loading at a driving force for which the crack would have arrested under monotonic loading, emerges in the simulations as a consequence of the evolution of internal stresses associated with the irreversibility of the dislocation motion. A fatigue threshold, Paris law behaviour, striations, the accelerated growth of short cracks and the scaling with material properties are outcomes of the calculations. Results for single crystals and polycrystals will be discussed.

A discrete dislocation analysis of fatigue crack growth

Cyclic loading of a plane strain mode I crack under small scale yielding is analyzed using discrete dislocation dynamics. The dislocations are all of edge character, and are modeled as line singularities in an elastic solid. At each stage of loading, superposition is used to represent the solution in terms of solutions for edge dislocations in a half-space and a non-singular complementary solution that enforces the boundary conditions, which is obtained from a linear elastic, finite element solution. The lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation are incorporated into the formulation through a set of constitutive rules. An irreversible relation between the opening traction and the displacement jump across a cohesive surface ahead of the initial crack tip is also specified, which permits crack growth to emerge naturally. It is found that crack growth can occur under cyclic loading conditions even when the peak stress intensity factor is smaller than the stress intensity required for crack growth under monotonic loading conditions; however below a certain threshold value of ΔKI no crack growth was seen.

An example of the use of neural computing techniques in materials science - The modelling of fatigue thresholds in Ni-base superalloys

Two adaptive numerical modelling techniques have been applied to prediction of fatigue thresholds in Ni-base superalloys. A Bayesian neural network and a neurofuzzy network have been compared, both of which have the ability to automatically adjust the network's complexity to the current dataset. In both cases, despite inevitable data restrictions, threshold values have been modelled with some degree of success. However, it is argued in this paper that the neurofuzzy modelling approach offers real benefits over the use of a classical neural network as the mathematical complexity of the relationships can be restricted to allow for the paucity of data, and the linguistic fuzzy rules produced allow assessment of the model without extensive interrogation and examination using a hypothetical dataset. The additive neurofuzzy network structure means that redundant inputs can be excluded from the model and simple sub-networks produced which represent global output trends. Both of these aspects are important for final verification and validation of the information extracted from the numerical data. In some situations neurofuzzy networks may require less data to produce a stable solution, and may be easier to verify in the light of existing physical understanding because of the production of transparent linguistic rules. © 1999 Elsevier Science S.A.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.