Directional algebraic reconstruction technique for electrical impedance tomography

We assume that the resistance matrix can be found in electrical impedance tomography from the assumption of linear dependence between the voltages and the currents and with the help of the resistance matrix and the transfer impedance between the electrodes, a directional algebraic reconstruction technique is proposed. The goal is to reconstruct the resistivity distribution by weighting the matrices that are obtained by calculating the orthogonal distance of the underlying mesh elements from the neighbouring port resistivity lines. These weighting matrices, which only depend on the topology of the underlying mesh, can be calculated offline and result in a computationally efficient online procedure with a reasonable image reconstruction performance. Simulation results are provided to validate this approach.

Dynamic phase boundary estimation using electrical impedance tomography

http://www.medphys.org/PhDAbstracts/ Abstracted in Medical Physics Journal

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.

Operation of a high frequency piezoelectric ultrasound array with an application specific integrated circuit

Integration of a piezoelectric high frequency ultrasound (HFUS) array with a microfabricated application specific integrated circuit (ASIC) performing a range of functions has several advantages for ultrasound imaging. The number of signal cables between the array/electronics and the data acquisition / imaging system can be reduced, cutting costs and increasing functionality. Electrical impedance matching is also simplified and the same approach can reduce overall system dimensions for applications such as endoscopic ultrasound. The work reported in this paper demonstrates early ASIC operation with a piezocomposite HFUS array operating at approximately 30 MHz. The array was tested in three different modes. Clear signals were seen in catch-mode, with an external transducer as a source of ultrasound, and in pitch-mode with the external transducer as a receiver. Pitch-catch mode was also tested successfully, using sequential excitation on three array elements, and viable signals were detected. However, these were relatively small and affected by interference from mixed-signal sources in the ASIC. Nevertheless, the functionality and compatibility of the two main components of an integrated HFUS - ASIC device have been demonstrated and the means of further optimization are evident.