60 resultados para Electric conductance

em Cambridge University Engineering Department Publications Database


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We characterized the electrical conductance of well-structured multi-walled carbon nanotubes (MWCNTs) which had post-treated by a rapid vacuum arc thermal annealing process and structure defects in these nanotubes are removed. We found that the after rapid vacuum arc annealing, the conductivity of well-structured MWCNTs can be improved by an order of magnitude. We also investigated the conductivity of MWCNTs bundle by the variation of temperatures. These results show that the conductance of annealed defect-free MWCNTs is sensitive to temperature imply the phonon scatting dominated the electron conductions. Compare to the well-structured MWCNTs, the defect scattering dominated the electron conduction in the as-grown control sample which has large amount of structure defects. A detail measurement of electron conduction from an individual well-structured MWCNT shows that the conductivity increases with temperatures which imply such MWCNTs exhibited semiconductor properties. We also produced back-gated field-effect transistors using these MWCNTs. It shows that the well-structured MWCNT can act as p-type semiconductor. © 2010 IEEE.

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We propose a single optical photon source for quantum cryptography based on the acousto-electric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons which reside in the SAW minima and travel at the velocity of sound. In our scheme these electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single (or N) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated.

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In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.

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This paper proposes an analytical approach that is generalized for the design of various types of electric machines based on a physical magnetic circuit model. Conventional approaches have been used to predict the behavior of electric machines but have limitations in accurate flux saturation analysis and hence machine dimensioning at the initial design stage. In particular, magnetic saturation is generally ignored or compensated by correction factors in simplified models since it is difficult to determine the flux in each stator tooth for machines with any slot-pole combinations. In this paper, the flux produced by stator winding currents can be calculated accurately and rapidly for each stator tooth using the developed model, taking saturation into account. This aids machine dimensioning without the need for a computationally expensive finite element analysis (FEA). A 48-slot machine operated in induction and doubly-fed modes is used to demonstrate the proposed model. FEA is employed for verification.