The efficiency of compensation grouting in sands

Physical model experiments on compensation grouting in sands were performed in two different setups (Cambridge and Delft). The effect of water-cement (w/c) ratio, bentonite content (b.c.) and injection rate on compensation efficiency was investigated. Results show a considerable drop in compensation efficiency resulted from reducing the soil density. Injection in dense sand (R.D. = 93%) resulted in efficiencies between 40-90%, whereas injection in medium-dense sand (R.D. = 60-75%) yielded in reduced efficiencies between 10-40%. When the w/c ratio increased from 0.5 to 1.5 for a given density (R.D. = 93%) and the b.c. of 4%, the compensation efficiency value decreased. Typical efficiencies were between 60% and 40-50% for w/c ratios of 0.5 and 1.5, respectively. The values of compensation and grout efficiencies were almost equal, suggesting that pressure filtration happens mainly during injection. Increasing the b.c. improved the compensation efficiency. When a higher b.c. of 12% to 14% was used, typical compensation efficiencies in dense sand were 78 and 90% for w/c ratios of 1.5 and 1.8 respectively. © 2012 Taylor & Francis Group.

Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications

The performance of a series of near-UV (∼385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the lightemitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50μm in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.

Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland.