295 resultados para EMBEDDED GENERATION

em Cambridge University Engineering Department Publications Database


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The usage of semiconductor nanostructures is highly promising for boosting the energy conversion efficiency in photovoltaics technology, but still some of the underlying mechanisms are not well understood at the nanoscale length. Ge quantum dots (QDs) should have a larger absorption and a more efficient quantum confinement effect than Si ones, thus they are good candidate for third-generation solar cells. In this work, Ge QDs embedded in silica matrix have been synthesized through magnetron sputtering deposition and annealing up to 800°C. The thermal evolution of the QD size (2 to 10 nm) has been followed by transmission electron microscopy and X-ray diffraction techniques, evidencing an Ostwald ripening mechanism with a concomitant amorphous-crystalline transition. The optical absorption of Ge nanoclusters has been measured by spectrophotometry analyses, evidencing an optical bandgap of 1.6 eV, unexpectedly independent of the QDs size or of the solid phase (amorphous or crystalline). A simple modeling, based on the Tauc law, shows that the photon absorption has a much larger extent in smaller Ge QDs, being related to the surface extent rather than to the volume. These data are presented and discussed also considering the outcomes for application of Ge nanostructures in photovoltaics.PACS: 81.07.Ta; 78.67.Hc; 68.65.-k.

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This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

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We present solutions to scattering problems for unsteady disturbances to a mean swirling flow in an annular duct with a rigid 'splitter'. This situation has application to rotor-stator interaction noise in aeroengines, where the flow downstream of the fan is swirling and bifurcates into the by-pass duct and the engine core. We also consider the trailing edge extension of this problem. Inviscid mean flow in a cylindrical annulus is considered, with both axial and swirling (azimuthal) velocity components. The presence of vorticity in the mean flow couples the acoustic and vorticity modes of irrotational flow. Instead we have one combined spectrum of acoustic-vorticity waves in which the 'sonic' and 'nearly-convected' modes are fully coupled. In addition to the aeroacoustics application the results offer insight into the behaviour of these acoustic-vorticity waves, and the precise nature of the coupling between the two types of mode. Two regimes are discussed in which progress has been made, one for a specialised mean flow, uniform axial flow and rigid body swirl, and a second regime in which the frequency is assumed large, valid for any axisymmetric mean flow. The Wiener-Hopf technique is used to solve the scattering problems mathematically, and we present numerical evaluations of these solutions. Several new effects are seen to arise due to the mean vorticity, in particular the generation of sound at a trailing edge due to the scattering of a nearly convected disturbance, in contrast to the way a convected gust silently passes a trailing edge in uniform mean flow.

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This paper presents a method for fast and accurate determination of parameters relevant to the characterization of capacitive MEMS resonators like quality factor (Q), resonant frequency (fn), and equivalent circuit parameters such as the motional capacitance (Cm). In the presence of a parasitic feedthrough capacitor (CF) appearing across the input and output ports, the transmission characteristic is marked by two resonances: series (S) and parallel (P). Close approximations of these circuit parameters are obtained without having to first de-embed the resonator motional current typically buried in feedthrough by using the series and parallel resonances. While previous methods with the same objective are well known, we show that these are limited to the condition where CF ≪ CmQ. In contrast, this work focuses on moderate capacitive feedthrough levels where CF > CmQ, which are more common in MEMS resonators. The method is applied to data obtained from the measured electrical transmission of fabricated SOI MEMS resonators. Parameter values deduced via direct extraction are then compared against those obtained by a full extraction procedure where de-embedding is first performed and followed by a Lorentzian fit to the data based on the classical transfer function associated with a generic LRC series resonant circuit. © 2011 Elsevier B.V. All rights reserved.