68 resultados para ELECTRONIC SHELL STRUCTURE

em Cambridge University Engineering Department Publications Database


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A remarkable shell structure is described that, due to a particular combination of geometry and initial stress, has zero stiffness for any finite deformation along a twisting path; the shell is in a neutrally stable state of equilibrium. Initially the shell is straight in a longitudinal direction, but has a constant, nonzero curvature in the transverse direction. If residual stresses are induced in the shell by, for example, plastic deformation, to leave a particular resultant bending moment, then an analytical inextensional model of the shell shows it to have no change in energy along a path of twisted configurations. Real shells become closer to the inextensional idealization as their thickness is decreased; experimental thin-shell models have confirmed the neutrally stable configurations predicted by the inextensional theory. A simple model is described that shows that the resultant bending moment that leads to zero stiffness gives the shell a hidden symmetry, which explains this remarkable property.

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We propose a computational method for the coupled simulation of a compressible flow interacting with a thin-shell structure undergoing large deformations. An Eulerian finite volume formulation is adopted for the fluid and a Lagrangian formulation based on subdivision finite elements is adopted for the shell response. The coupling between the fluid and the solid response is achieved via a novel approach based on level sets. The basic approach furnishes a general algorithm for coupling Lagrangian shell solvers with Cartesian grid based Eulerian fluid solvers. The efficiency and robustness of the proposed approach is demonstrated with a airbag deployment simulation. It bears emphasis that in the proposed approach the solid and the fluid components as well as their coupled interaction are considered in full detail and modeled with an equivalent level of fidelity without any oversimplifying assumptions or bias towards a particular physical aspect of the problem.

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This paper describes two folded metamaterials based on the Miura-ori fold pattern. The structural mechanics of these metamaterials are dominated by the kinematics of the folding, which only depends on the geometry and therefore is scale-independent. First, a folded shell structure is introduced, where the fold pattern provides a negative Poisson's ratio for in-plane deformations and a positive Poisson's ratio for out-of-plane bending. Second, a cellular metamaterial is described based on a stacking of individual folded layers, where the folding kinematics are compatible between layers. Additional freedom in the design of the metamaterial can be achieved by varying the fold pattern within each layer.

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The electronic structure of SrBi2Ta2O9 and related oxides such as SrBi2Nb2O9, Bi2WO6 and Bi3Ti4O12 have been calculated by the tight-binding method. In each case, the band gap is about 4.1 eV and the band edge states occur on the Bi-O layers and consist of mixed O p/Bi s states at the top of the valence band and Bi p states at the bottom of the conduction band. The main difference between the compounds is that Nb 5d and Ti 4d states in the Nb and Ti compounds lie lower than the Ta 6d states in the conduction band. The surface pinning levels are found to pin Schottky barriers 0.8 eV below the conduction band edge.

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The band structure of the Bi layered perovskite SrBi2Ta2O9 (SBT) has been calculated by the tight binding method. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O block. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response of SBT while the ferroelectric response originates from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for the excellent fatigue properties of SBT.

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The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.

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Recently ZnO nanowire films have been used in very promising and inexpensive dye-sensitized solar cells (DSSC). It was found that the performance of the devices can be enhanced by functionalising the nanowires with a thin metal oxide coating. This nm-scale shell is believed to tailor the electronic structure of the nanowire, and help the absorption of the dye. Core-shell ZnO nanowire structures are synthesised at low temperature (below 120°C) by consecutive hydrothermal growth steps. Different materials are investigated for the coating, including Mg, Al, Cs and Zr oxides. High resolution TEM is used to characterise the quality of both the nanowire core and the shell, and to monitor the thickness and the degree of crystallisation of the oxide coating. The interface between the nanowire core and the outer shell is investigated in order to understand the adhesion of the coating, and give valuable feedback for the synthesis process. Nanowire films are packaged into dye-sensitised solar cell prototypes; samples coated with ZrO2 and MgO show the largest enhancement in the photocurrent and open-circuit voltage and look very promising for further improvement. © 2010 IOP Publishing Ltd.