High speed reconfiguration of dual-purpose vertical cavity surface emitting laser/detector

High-speed configuration results of a conventional 850 nm VCSEL that is modified to operate as an efficient avalanche detector as well as a laser are discussed. The measured laser-to-detector reconfiguration delay of 3.2 ns is longer than the 1.2 ns detector-to-detector reconfiguration delay.

DT-MRI data visualisation using the dual tree Complex Wavelet transform

In this paper a novel visualisation method for diffusion tensor MRI datasets is introduced. This is based on the use of Complex Wavelets in order to produce "stripy" textures which depict the anisotropic component of the diffusion tensors. Grey-scale pixel intensity is used to show the isotropic component. This paper also discusses enhancements of the technique for 3D visualisation. © 2004 IEEE.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

Dual-wavelength, carbon nanotube mode-locked fiber laser

We demonstrate a dual-wavelength, carbon nanotube mode-locked Er fiber laser. The laser outputs two wavelengths at 1549nm and 1562nm, and each wavelength corresponds to pulse duration of ∼1.3ps and repetition rate of ∼11.27MHz. © 2012 IEEE.

Measurement of the Interaction Between Recombinant I-domain from Integrin alpha 2 beta 1 and a Triple Helical Collagen Peptide with the GFOGER Binding Motif Using Molecular Force Spectroscopy.

The role of the collagen-platelet interaction is of crucial importance to the haemostatic response during both injury and pathogenesis of the blood vessel wall. Of particular interest is the high affinity interaction of the platelet transmembrane receptor, alpha 2 beta 1, responsible for firm attachment of platelets to collagen at and around injury sites. We employ single molecule force spectroscopy (SMFS) using the atomic force microscope (AFM) to study the interaction of the I-domain from integrin alpha 2 beta 1 with a synthetic collagen related triple-helical peptide containing the high-affinity integrin-binding GFOGER motif, and a control peptide lacking this sequence, referred to as GPP. By utilising synthetic peptides in this manner we are able to study at the molecular level subtleties that would otherwise be lost when considering cell-to-collagen matrix interactions using ensemble techniques. We demonstrate for the first time the complexity of this interaction as illustrated by the complex multi-peaked force spectra and confirm specificity using control blocking experiments. In addition we observe specific interaction of the GPP peptide sequence with the I-domain. We propose a model to explain these observations.

Electrical/optical dual-function redox potential transistor

We demonstrate a new type of transistors, the electrical/optical "dual-function redox-potential transistors", which is solution processable and environmentally stable. This device consists of vertically staked electrodes that act as gate, emitter and collector. It can perform as a normal transistor, whilst one electrode which is sensitised by dye enables to generate photocurrent when illuminated. Solution processable oxide-nanoparticles were used to form various functional layers, which allow an electrolyte to penetrate through and, consequently, the current between emitter and collector can be controlled by the gate potential modulated distribution of ions. The result here shows that the device performs with high ON-current under low driving voltage (<1â€...V), while the transistor performance can readily be controlled by photo-illumination. Such device with combined optical and electrical functionalities allows single device to perform the tasks that are usually done by a circuit/system with multiple optical and electrical components, and it is promising for various applications.

A dual mode SOI CMOS MEMS based thermal conductivity and IR absorption gas sensor

Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700°C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices. © 2013 IEEE.