Forcing of self-excited round jet diffusion flames

In this experimental and numerical study, two types of round jet are examined under acoustic forcing. The first is a non-reacting low density jet (density ratio 0.14). The second is a buoyant jet diffusion flame at a Reynolds number of 1100 (density ratio of unburnt fluids 0.5). Both jets have regions of strong absolute instability at their base and this causes them to exhibit strong self-excited bulging oscillations at welldefined natural frequencies. This study particularly focuses on the heat release of the jet diffusion flame, which oscillates at the same natural frequency as the bulging mode, due to the absolutely unstable shear layer just outside the flame. The jets are forced at several amplitudes around their natural frequencies. In the non-reacting jet, the frequency of the bulging oscillation locks into the forcing frequency relatively easily. In the jet diffusion flame, however, very large forcing amplitudes are required to make the heat release lock into the forcing frequency. Even at these high forcing amplitudes, the natural mode takes over again from the forced mode in the downstream region of the flow, where the perturbation is beginning to saturate non-linearly and where the heat release is high. This raises the possibility that, in a flame with large regions of absolute instability, the strong natural mode could saturate before the forced mode, weakening the coupling between heat release and incident pressure perturbations, hence weakening the feedback loop that causes combustion instability. © 2009 The Combustion Institute. Published by Elsevier Inc. All rights reserved.

High temperature direct double side cooled inverter module for hybrid electric vehicle application

In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.