Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

Context-dependent human extinction memory is mediated by a ventromedial prefrontal and hippocampal network.

In fear extinction, an animal learns that a conditioned stimulus (CS) no longer predicts a noxious stimulus [unconditioned stimulus (UCS)] to which it had previously been associated, leading to inhibition of the conditioned response (CR). Extinction creates a new CS-noUCS memory trace, competing with the initial fear (CS-UCS) memory. Recall of extinction memory and, hence, CR inhibition at later CS encounters is facilitated by contextual stimuli present during extinction training. In line with theoretical predictions derived from animal studies, we show that, after extinction, a CS-evoked engagement of human ventromedial prefrontal cortex (VMPFC) and hippocampus is context dependent, being expressed in an extinction, but not a conditioning, context. Likewise, a positive correlation between VMPFC and hippocampal activity is extinction context dependent. Thus, a VMPFC-hippocampal network provides for context-dependent recall of human extinction memory, consistent with a view that hippocampus confers context dependence on VMPFC.

Optimal H2 order-one reduction by solving eigenproblems for polynomial equations

A method is given for solving an optimal H2 approximation problem for SISO linear time-invariant stable systems. The method, based on constructive algebra, guarantees that the global optimum is found; it does not involve any gradient-based search, and hence avoids the usual problems of local minima. We examine mostly the case when the model order is reduced by one, and when the original system has distinct poles. This case exhibits special structure which allows us to provide a complete solution. The problem is converted into linear algebra by exhibiting a finite-dimensional basis for a certain space, and can then be solved by eigenvalue calculations, following the methods developed by Stetter and Moeller. The use of Buchberger's algorithm is avoided by writing the first-order optimality conditions in a special form, from which a Groebner basis is immediately available. Compared with our previous work the method presented here has much smaller time and memory requirements, and can therefore be applied to systems of significantly higher McMillan degree. In addition, some hypotheses which were required in the previous work have been removed. Some examples are included.

Holographic memory with correlator based readout

The investigation of an inverted hybrid digital/ optical VanderLugt type correlator based on a holographic memory is reported in this paper. A set of reference templates is stored in a photorefractive crystal (PRC) by angular hologram multiplexing. In the filter plane, a phase-modulating liquid crystal television (LCTV) serves as a phase-only input device. During the recognition process, which is based on the pure phase correlation, the reference templates are correlated sequentially with the input object. This correlator shows high sensitivity to object rotation, sharp correlation peaks, high light efficiency, and is fully shift-invariant in spite of the PRC thickness. The influences of the LCTV on the performance of the system are discussed and experimental results are shown.

Mechanical constraint and loading on ferroelectric memory capacitors

The influence of mechanical constraint imposed by device geometry upon the switching response of a ferroelectric thin film memory capacitor is investigated. The memory capacitor was represented by two-dimensional ferroelectric islands of different aspect ratio, mechanically constrained by surrounding materials. Its ferroelectric non-linear behaviour was modeled by a crystal plasticity constitutive law and calculated using the finite element method. The switching response of the device, in terms of remnant charge storage, was determined as a function of geometry and constraint. The switching response under applied in-plane tensile stress and hydrostatic pressure was also studied experimentally. Our results showed that (1) the capacitor's aspect ratio could significantly affect the clamping behaviour and thus the remnant polarization, (2) it was possible to maximise the switching charge through the optimisation of the device geometry, and (3) it is possible to find a critical switching stress at zero electric field and a critical coercive field at zero residual stress. © 2009 Materials Research Society.

Estimating and Enhancing the Yield of Tuneling SRAM Cells by Simulation

As a novel implementation of the static random access memory (SRAM), the tunneling SRAM (TSRAM) uses the negative differential resistance of tunnel diodes (TD’s) and potentially offers considerable improvements in both standby power dissipation and integration density compared to the conventional CMOS SRAM. TSRAM has not yet been realized with a useful bit capacity mainly because the level of uniformity required of the nanoscale TD’s has been demanding and difficult to achieve. In this letter, we propose a Monte Carlo approach for estimating the yield of TSRAM cells and show that by optimizing the cell’s external circuit parameters, we can relax the allowable tolerance of a key device parameter of a resonant-TD-(RTD) based cell by three times.

Ferroelectric-carbon nanotube memory devices

One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNTinorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O 3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Lowloss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Currentvoltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectriccarbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices. © 2012 IOP Publishing Ltd.

NEMS based logic and memory circuits

Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical 'on-off' behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices. © 2012 IEEE.

Variability in encoding precision accounts for visual short-term memory limitations.

It is commonly believed that visual short-term memory (VSTM) consists of a fixed number of "slots" in which items can be stored. An alternative theory in which memory resource is a continuous quantity distributed over all items seems to be refuted by the appearance of guessing in human responses. Here, we introduce a model in which resource is not only continuous but also variable across items and trials, causing random fluctuations in encoding precision. We tested this model against previous models using two VSTM paradigms and two feature dimensions. Our model accurately accounts for all aspects of the data, including apparent guessing, and outperforms slot models in formal model comparison. At the neural level, variability in precision might correspond to variability in neural population gain and doubly stochastic stimulus representation. Our results suggest that VSTM resource is continuous and variable rather than discrete and fixed and might explain why subjective experience of VSTM is not all or none.

Modulation of pain ratings by expectation and uncertainty: Behavioral characteristics and anticipatory neural correlates.

Expectations about the magnitude of impending pain exert a substantial effect on subsequent perception. However, the neural mechanisms that underlie the predictive processes that modulate pain are poorly understood. In a combined behavioral and high-density electrophysiological study we measured anticipatory neural responses to heat stimuli to determine how predictions of pain intensity, and certainty about those predictions, modulate brain activity and subjective pain ratings. Prior to receiving randomized laser heat stimuli at different intensities (low, medium or high) subjects (n=15) viewed cues that either accurately informed them of forthcoming intensity (certain expectation) or not (uncertain expectation). Pain ratings were biased towards prior expectations of either high or low intensity. Anticipatory neural responses increased with expectations of painful vs. non-painful heat intensity, suggesting the presence of neural responses that represent predicted heat stimulus intensity. These anticipatory responses also correlated with the amplitude of the Laser-Evoked Potential (LEP) response to painful stimuli when the intensity was predictable. Source analysis (LORETA) revealed that uncertainty about expected heat intensity involves an anticipatory cortical network commonly associated with attention (left dorsolateral prefrontal, posterior cingulate and bilateral inferior parietal cortices). Relative certainty, however, involves cortical areas previously associated with semantic and prospective memory (left inferior frontal and inferior temporal cortex, and right anterior prefrontal cortex). This suggests that biasing of pain reports and LEPs by expectation involves temporally precise activity in specific cortical networks.

Inhibitory plasticity balances excitation and inhibition in sensory pathways and memory networks

Cortical neurons receive balanced excitatory and inhibitory synaptic currents. Such a balance could be established and maintained in an experience-dependent manner by synaptic plasticity at inhibitory synapses. We show that this mechanism provides an explanation for the sparse firing patterns observed in response to natural stimuli and fits well with a recently observed interaction of excitatory and inhibitory receptive field plasticity. The introduction of inhibitory plasticity in suitable recurrent networks provides a homeostatic mechanism that leads to asynchronous irregular network states. Further, it can accommodate synaptic memories with activity patterns that become indiscernible from the background state but can be reactivated by external stimuli. Our results suggest an essential role of inhibitory plasticity in the formation and maintenance of functional cortical circuitry.

A printable optical time-temperature integrator based on shape memory in a chiral nematic polymer network

An optical and irreversible temperature sensor (e.g., a time-temperature integrator) is reported based on a mechanically embossed chiral-nematic polymer network. The polymer consists of a chemical and a physical (hydrogen-bonded) network and has a reflection band in the visible wavelength range. The sensors are produced by mechanical embossing at elevated temperatures. A relative large compressive deformation (up to 10%) is obtained inducing a shift to shorter wavelength of the reflection band (>30 nm). After embossing, a temperature sensor is obtained that exhibits an irreversible optical response. A permanent color shift to longer wavelengths (red) is observed upon heating of the polymer material to temperatures above the glass transition temperature. It is illustrated that the observed permanent color shift is related to shape memory in the polymer material. The films can be printed on a foil, thus showing that these sensors are potentially interesting as time-temperature integrators for applications in food and pharmaceutical products. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼105, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 104 s. © 2014 AIP Publishing LLC.

Correlations strike back (again): The case of associative memory retrieval

It has long been recognised that statistical dependencies in neuronal activity need to be taken into account when decoding stimuli encoded in a neural population. Less studied, though equally pernicious, is the need to take account of dependencies between synaptic weights when decoding patterns previously encoded in an auto-associative memory. We show that activity-dependent learning generically produces such correlations, and failing to take them into account in the dynamics of memory retrieval leads to catastrophically poor recall. We derive optimal network dynamics for recall in the face of synaptic correlations caused by a range of synaptic plasticity rules. These dynamics involve well-studied circuit motifs, such as forms of feedback inhibition and experimentally observed dendritic nonlinearities. We therefore show how addressing the problem of synaptic correlations leads to a novel functional account of key biophysical features of the neural substrate.