SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Process simulation programs are valuable in generating accurate impurity profiles. Apart from accuracy the programs should also be efficient so as not to consume vast computer memory. This is especially true for devices and circuits of VLSI complexity. In this paper a remeshing scheme to make the finite element based solution of the non-linear diffusion equation more efficient is proposed. A remeshing scheme based on comparing the concentration values of adjacent node was then implemented and found to remove the problems of oscillation.

Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Modeling bipolar power semiconductor devices gachovska

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.

A fracture criterion for the notch strength of high strength steels in the presence of hydrogen

High strength steels can suffer from a loss of ductility when exposed to hydrogen, and this may lead to sudden failure. The hydrogen is either accommodated in the lattice or is trapped at defects, such as dislocations, grain boundaries and carbides. The challenge is to identify the effect of hydrogen located at different sites upon the drop in tensile strength of a high strength steel. For this purpose, literature data on the failure stress of notched and un-notched steel bars are re-analysed; the bars were tested over a wide range of strain rates and hydrogen concentrations. The local stress state at failure has been determined by the finite element (FE) method, and the concentration of both lattice and trapped hydrogen is predicted using Oriani's theory along with the stress-driven diffusion equation. The experimental data are rationalised in terms of a postulated failure locus of peak maximum principal stress versus lattice hydrogen concentration. This failure locus is treated as a unique material property for the given steel and heat treatment condition. We conclude that the presence of lattice hydrogen increases the susceptibility to hydrogen embrittlement whereas trapped hydrogen has only a negligible effect. It is also found that the observed failure strength of hydrogen charged un-notched bars is less than the peak local stress within the notched geometries. Weakest link statistics are used to account for this stressed volume effect. © 2013 Elsevier Ltd.

Forcing of self-excited round jet diffusion flames

In this experimental and numerical study, two types of round jet are examined under acoustic forcing. The first is a non-reacting low density jet (density ratio 0.14). The second is a buoyant jet diffusion flame at a Reynolds number of 1100 (density ratio of unburnt fluids 0.5). Both jets have regions of strong absolute instability at their base and this causes them to exhibit strong self-excited bulging oscillations at welldefined natural frequencies. This study particularly focuses on the heat release of the jet diffusion flame, which oscillates at the same natural frequency as the bulging mode, due to the absolutely unstable shear layer just outside the flame. The jets are forced at several amplitudes around their natural frequencies. In the non-reacting jet, the frequency of the bulging oscillation locks into the forcing frequency relatively easily. In the jet diffusion flame, however, very large forcing amplitudes are required to make the heat release lock into the forcing frequency. Even at these high forcing amplitudes, the natural mode takes over again from the forced mode in the downstream region of the flow, where the perturbation is beginning to saturate non-linearly and where the heat release is high. This raises the possibility that, in a flame with large regions of absolute instability, the strong natural mode could saturate before the forced mode, weakening the coupling between heat release and incident pressure perturbations, hence weakening the feedback loop that causes combustion instability. © 2009 The Combustion Institute. Published by Elsevier Inc. All rights reserved.