Inventors and entrepreneurs in academia: What types of skills and experience matter?

This paper aims to improve our understanding of the attributes of academic researchers that influence the capacity to contribute to technical advance, by adding to the pool of technological opportunities available to industry or engaging in the exploitation of entrepreneurial opportunities. We investigate a number of factors associated with the skills developed by academic researchers. We find that contributions to the pool of technological opportunities and exploitation of entrepreneurial opportunities involve different sets of skills and expertise of scientists. Our results show that the former is driven by academic scientists research excellence and discovery of earlier technological opportunities and the latter is driven by previous collaboration with industry partners, scientific breadth and experience of technological discovery. © 2011 Elsevier Ltd. All rights reserved.

Effect of imperfections on the yielding of two-dimensional foams

The influence of each of the six different types of morphological imperfection - waviness, non-uniform cell wall thickness, cell-size variations, fractured cell walls, cell-wall misalignments, and missing cells - on the yielding of 2D cellular solids has been studied systematically for biaxial loading. Emphasis is placed on quantifying the knock-down effect of these defects on the hydrostatic yield strength and upon understanding the associated deformation mechanisms. The simulations in the present study indicate that the high hydrostatic strength, characteristic of ideal honeycombs, is reduced to a level comparable with the deviatoric strength by several types of defect. The common source of this large knock-down is a switch in deformation mode from cell wall stretching to cell wall bending under hydrostatic loading. Fractured cell edges produce the largest knock-down effect on the yield strength of 2D foams, followed in order by missing cells, wavy cell edges, cell edge misalignments, Γ Voronoi cells, δ Voronoi cells, and non-uniform wall thickness. A simple elliptical yield function with two adjustable material parameters successfully fits the numerically predicted yield surfaces for the imperfect 2D foams, and shows potential as a phenomenological constitutive law to guide the design of structural components made from metallic foams.

An experimental study on the load carrying capacity of cold-formed steel studs and panels

A full-scale experimental study on the structural performance of load-bearing wall panels made of cold-formed steel frames and boards is presented. Six different types of C-channel stud, a total of 20 panels with one middle stud and 10 panels with two middle studs were tested under vertical compression until failure. For panels, the main variables considered are screw spacing (300 mm, 400 mm, or 600 mm) in the middle stud, board type (oriented strand board - OSB, cement particle board - CPB, or calcium silicate board - CSB), board number (no sheathing, one-side sheathing, or two-side sheathing), and loading type (1, 3, or 4-point loading). The measured load capacity of studs and panels agrees well with analytical prediction. Due to the restraint by rivet connections between stud and track, the effective length factor for the middle stud and the side stud in a frame (unsheathed panel) is reduced to 0.90 and 0.84, respectively. The load carrying capacity of a stud increases significantly whenever one- or two-side sheathing is used, although the latter is significantly more effective. It is also dependent upon the type of board used. Whereas panels with either OSB or CPB boards have nearly identical load carrying capacity, panels with CSB boards are considerably weaker. Screw spacing affects the load carrying capacity of a stud. When the screw spacing on the middle stud in panels with one-side sheathing is reduced from 600 mm to 300 mm, its load carrying capacity increases by 14.5 %, 20.6% and 94.2% for OSB, CPB and CSB, respectively.

Different methods of manufacturing FE-based oxygen carrier particles for reforming via chemical looping, and their effect on performance

Chemical looping combustion (CLC) is a means of combusting carbonaceous fuels, which inherently separates the greenhouse gas carbon dioxide from the remaining combustion products, and has the potential to be used for the production of high-purity hydrogen. Iron-based oxygen carriers for CLC have been subject to considerable work; however, there are issues regarding the lifespan of iron-based oxygen carriers over repeated cycles. In this work, haematite (Fe2O3) was reduced in an N2+CO+CO2 mixture within a fluidised bed at 850°C, and oxidised back to magnetite (Fe3O4) in a H2O+N2 mixture, with the subsequent yield of hydrogen during oxidation being of interest. Subsequent cycles started from Fe3O4 and two transition regimes were studied; Fe3O4↔Fe0.947O and Fe 3O4↔Fe. Particles were produced by mechanical mixing and co-precipitation. In the case of co-precipitated particles, Al was added such that the ratio of Fe:Al by weight was 9:1, and the final pH of the particles during precipitation was investigated for its subsequent effect on reactivity. This paper shows that co-precipitated particles containing additives such as Al may be able to achieve consistently high H2 yields when cycling between Fe3O4 and Fe, and that these yields are a function of the ratio of [CO2] to [CO] during reduction, where thermodynamic arguments suggest that the yield should be independent of this ratio. A striking feature with our materials was that particles made by mechanical mixing performed much better than those made by co-precipitation when cycling between Fe3O4 and Fe0.947O, but much worse than co-precipitated particles when cycling between Fe3O 4 and Fe.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.