Templates and anchors for antenna-based wall following in cockroaches and robots

The interplay between robotics and neuromechanics facilitates discoveries in both fields: nature provides roboticists with design ideas, while robotics research elucidates critical features that confer performance advantages to biological systems. Here, we explore a system particularly well suited to exploit the synergies between biology and robotics: high-speed antenna-based wall following of the American cockroach (Periplaneta americana). Our approach integrates mathematical and hardware modeling with behavioral and neurophysiological experiments. Specifically, we corroborate a prediction from a previously reported wall-following template - the simplest model that captures a behavior - that a cockroach antenna-based controller requires the rate of approach to a wall in addition to distance, e.g., in the form of a proportional-derivative (PD) controller. Neurophysiological experiments reveal that important features of the wall-following controller emerge at the earliest stages of sensory processing, namely in the antennal nerve. Furthermore, we embed the template in a robotic platform outfitted with a bio-inspired antenna. Using this system, we successfully test specific PD gains (up to a scale) fitted to the cockroach behavioral data in a "real-world" setting, lending further credence to the surprisingly simple notion that a cockroach might implement a PD controller for wall following. Finally, we embed the template in a simulated lateral-leg-spring (LLS) model using the center of pressure as the control input. Importantly, the same PD gains fitted to cockroach behavior also stabilize wall following for the LLS model. © 2008 IEEE.

Holographic memory with correlator based readout

The investigation of an inverted hybrid digital/ optical VanderLugt type correlator based on a holographic memory is reported in this paper. A set of reference templates is stored in a photorefractive crystal (PRC) by angular hologram multiplexing. In the filter plane, a phase-modulating liquid crystal television (LCTV) serves as a phase-only input device. During the recognition process, which is based on the pure phase correlation, the reference templates are correlated sequentially with the input object. This correlator shows high sensitivity to object rotation, sharp correlation peaks, high light efficiency, and is fully shift-invariant in spite of the PRC thickness. The influences of the LCTV on the performance of the system are discussed and experimental results are shown.

Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.

Application of 'UREAD' for the energy dissipation in engineering structures

A concept based upon Equal Channel Angular Extrusion (ECAE) is developed and introduced in the form of a Universal Re-usable Energy Absorption Device 'UREAD'. In impact situations the device utilises the energy required to extrude deformable materials through the shear planes of a set of intersecting channels and hence provides the means to protect engineering structures. The impact force is absorbed through the resistance of a deformable material and the energy is dissipated through an operational stroke. This paper examines the use of this new concept under dynamic loading. The device performance and usability during dynamic impacts are tested in a landing frame type experiment where the effectiveness of the technique in reducing impact loads and energy are also examined. © (2011) Trans Tech Publications Switzerland.

Benefits of current percolation in superconducting coated conductors

The critical currents of coated conductors fabricated by metal-organic deposition (MOD) on rolling-assisted biaxially textured substrates (RABiTS) and by pulsed laser deposition (PLD) on ion-beam assisted deposition (IBAD) templates have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors have also been compared to samples whose grain boundaries have been doped by diffusing Ca from an overlayer. We find that undoped MOD/RABiTS tapes have a less anisotropic in-plane field dependence than PLD/IBAD tapes and that the uniformity of critical current as a function of in-plane field angle is greater for MOD/RABiTS samples doped with Ca. (C) 2005 American Institute of Physics.

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.