Measurement of stressful postures during daily activities: An observational study with older people.

This study measured the postures of older people during cooking and laundry. A sample of men and women aged 75+ years (n=27) was recruited and observed in a home-like environment. Postures were recorded with a measurement system in an objective and detailed manner. The participants were videotaped to be able to see where 'critical' postures occurred, as defined by a trunk inclination of ≥60°. Analysis of data was facilitated by specially developed software. Critical postures accounted for 3% of cooking and 10% of laundry, occurring primarily during retrieving from and putting in lower cabinets, the refrigerator, laundry basket or washing machine as well as disposing into the waste bin. These tasks involve a great variation in postural changes and pose a particular risk to older people. The results suggest that the use of stressful postures may decrease efficiency and increase fatigue, eventually leading to difficulties with daily activities. The specific tasks identified during which critical postures occurred should be targeted by designers in order to improve the activities. A few examples are given of how better design can reduce or eliminate some of the postural constraints.

Defined etching of carbon-diamond films on silicon using an oxygen plasma with titanium masking

A technique for pattern transfer onto carbon-diamond films deposited by radio-frequency plasma-enhanced chemical vapour deposition is reported. Such a technique involves standard photolithography processes and reactive ion etching by oxygen and is compatible with present day microelectronic technology. The patterns transferred are well defined with very good resolution. © 1992.

ANNEALING BEHAVIOUR OF HIGH DOSE As** plus IMPLANTS.

The annealing behaviour of doses up to 4. 10**1**6 ions/cm**2 implanted at ion currents up to 10ma is described. Differences between rapid isothermal and furnace annealing in the measured sheet resistances are due to different amounts of diffusion and to loss of dopant by evaporation. Implantation at high currents (10ma) does not appear to affect the quality of the regrown material provided the temperature rise during implantation is small.

The Modeling of Ion Implantation in a Three-Layer Structure Using the Method of Dose Matching

The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modelling of As⁺ in poly-Si/SiO2/Si. Good agreement with experiment is obtained. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.