6 resultados para Daño estructural

em Cambridge University Engineering Department Publications Database


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We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

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In recent years a variety of experimental and theoretical work has been reported on the use of semiconductor optical amplifiers for high speed wavelength conversion. However little work has addressed the dynamic limitations of this conversion process in detail with a view to device optimization. In this paper, a detailed study of the conversion process is carried out in order to optimize device parameters and drive conditions for increased conversion speed and improved modulation index.