Influence of surfactant solubility on the deformation and breakup of a bubble or capillary jet in a viscous fluid

In a previous study [M. Hameed, J. Fluid Mech. 594, 307 (2008)] the authors investigated the influence of insoluble surfactant on the evolution of a stretched, inviscid bubble surrounded by a viscous fluid via direct numerical simulation of the Navier-Stokes equations, and showed that the presence of surfactant can cause the bubble to contract and form a quasisteady slender thread connecting parent bubbles, instead of proceeding directly toward pinch-off as occurs for a surfactant-free bubble. Insoluble surfactant significantly retards pinch-off and the thread is stabilized by a balance between internal pressure and reduced capillary pressure due to a high concentration of surfactant that develops during the initial stage of contraction. In the present study we investigate the influence of surfactant solubility on thread formation. The adsorption-desorption kinetics for solubility is in the diffusion controlled regime. A long-wave model for the evolution of a capillary jet is also studied in the Stokes flow limit, and shows dynamics that are similar to those of the evolving bubble. With soluble surfactant, depending on parameter values, a slender thread forms but can pinch-off later due to exchange of surfactant between the interface and exterior bulk flow. © 2009 American Institute of Physics.

p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.

High-current adaptive impedance matching in narrowband power-line communication systems

This paper proposes a high current impedance matching method for narrowband power-line communication (NPLC) systems. The impedance of the power-line channel is time and location variant; therefore, coupling circuitry and the channel are not usually matched. This not only results in poor signal integrity at the receiving end, but also leads to a higher transmission power requirement to secure the communication process. To offset this negative effect, a high-current adaptive impedance circuit to enable impedance matching in power-line networks is reported. The approach taken is to match the channel impedance of N-PLC systems is based on the General Impedance Converter (GIC). In order to achieve high current a special coupler in which the inductive impedance can be altered by adjusting a microcontroller controlled digital resistor is demonstrated. It is shown that the coupler works well with heavy load current in power line networks. It works in both low and high transmitting current modes, a current as high as 760 mA has been obtained. Besides, compared with other adaptive impedance couplers, the advantages include higher matching resolution and a simple control interface. Experimental results are presented to demonstrate the operation of the coupler. © 2011 IEEE.

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

Axial discontinuity factors for the nodal diffusion analysis of high conversion BWR cores

High conversion LWRs concepts typically rely on a heterogeneous core configuration, where fissile zones are interspersed with fertile blanket zones in order to achieve a high conversion ratio. Modeling such a heterogeneous structure of these cores represents a significant challenge to the conventional reactor analysis methods. It was recently suggested to overcome such difficulties, in particular, for the case of axially heterogeneous reduced moderation BWRs, by introducing an additional set of discontinuity factors in axial direction at the interfaces between fissile and fertile fuel assembly zones. However, none of the existing nodal diffusion core simulators have the capability of accounting for discontinuity of homogeneous nodal fluxes in axial direction since the fuel composition of conventional LWRs is much more axially uniform. In this work, we modified the nodal diffusion code DYN3D by introducing such a capability. The new version of the code was tested on a series of reduced moderation BWR cases with Th-U233 and U-Pu-MA fuel. The library of few-group homogenized cross sections and the data required for the calculation of discontinuity factors were generated using the Monte Carlo transport code Serpent. The results obtained with the modified version of DYN3D were compared with the reference Monte Carlo solutions and were found to be in good agreement. The current analysis demonstrates that high conversion LWRs can in principle be modeled using existing nodal diffusion core simulators. © 2013 Elsevier Ltd. All rights reserved.

IGBT converters conducted EMI analysis by controlled multiple-slope switching waveform approximation

IGBTs realise high-performance power converters. Unfortunately, with fast switching of the IGBT-free wheel diode chopper cell, such circuits are intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally needed on the load and supply side. In order to design these EMI suppression components, designers need to predict the EMI level with reasonable accuracy for a given structure and operating mode. Simplifying the transient IGBT switching current and voltage into a multiple slope switching waveform approximation offers a feasible way to estimate conducted EMI with some accuracy. This method is dependent on the availability of high-fidelity measurements. Also, that multiple slope approximation needs careful and time-costly IGBT parameters optimisation process to approach the real switching waveform. In this paper, Active Voltage Control Gate Drive(AVC GD) is employed to shape IGBT switching into several defined slopes. As a result, Conducted EMI prediction by multiple slope switching approximation could be more accurate, less costly but more friendly for implementation. © 2013 IEEE.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.

High performance transistors based on the controlled growth of triisopropylsilylethynyl-pentacene crystals via non-isotropic solvent evaporation

Triisopropylsilylethynyl-pentacene (TIPS-PEN) has proven to be one of the most promising small molecules in the field of molecular electronics, due to its unique features in terms of stability, performance and ease of processing. Among a wide variety of well-established techniques for the deposition of TIPS-PEN, blade-metered methods have recently gained great interest towards the formation of uniform crystalline films over a large area. Following this rationale, we herein designed a versatile approach based on blade-coating, which overcomes the problem of anisotropic crystal formation by manipulating the solvent evaporation behaviour, in a way that brings about a preferential degree of crystal orientation. The applicability of this method was evaluated by fabricating field-effect transistors on glass as well as on silicon dioxide/silicon (SiO2/Si) substrates. Interestingly, in an attempt to improve the rheological and wetting behaviour of the liquid films on the SiO2/Si substrates, we introduced a polymeric interlayer of polystyrene (PS) or polymethylmethacrylate (PMMA) which concurrently acts as passivation and crystallization assisting layer. In this case, the synergistic effects of the highly-ordered crystalline structure and the oxide surface modification were thoroughly investigated. The overall performance of the fabricated devices revealed excellent electrical characteristics, with high saturation mobilities up to 0.72 cm2 V-1 s-1 (on glass with polymeric dielectric), on/off current ratio >104 and low threshold voltage values (<-5 V). This journal is © the Partner Organisations 2014.