Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Analysis of switched capacitor DC-DC step down converter

A 5V/1 V Switched Capacitor (SC) dc-dc converter designed for a 0.18μm CMOS process is analysed in detail, in this paper. Analytical equations are derived for the voltages and currents through the main components of the SC converter. The model includes switches, capacitors, equivalent series resistances and the load. The switches in the converter are represented by MOSFETs in the UMC 0.18μm CMOS process. The impact of system parameters on output voltage ripple are studied using the analytical expressions.