Dynamic modelling of the brushless doubly fed machine

A coupled-circuit model for the brushless doubly fed machine (BDFM) has been developed. The transformation of the model into the d-q axis form, ultimately in a synchronous reference frame in which machine currents and voltages have constant values in the steady state, has been carried out. A model-reduction technique is presented, which gives a concise representation of the 'nested-loop' rotor design using a single d-q pair. These models have been experimentally verified and give a convenient and accurate way of calculating the dynamic behaviour of a BDFM. The ability to represent the BDFM with a single d-q pair considerably simplifies the design of suitable controllers. © The Institution of Engineering and Technology 2013.

Numerical analysis of the current and voltage sharing issues for resistive fault current limiter using YBCO coated conductors

YBaCuO-coated conductors offer great potential in terms of performance and cost-saving for superconducting fault current limiter (SFCL). A resistive SFCL based on coated conductors can be made from several tapes connected in parallel or in series. Ideally, the current and voltage are shared uniformly by the tapes when quench occurs. However, due to the non-uniformity of property of the tapes and the relative positions of the tapes, the currents and the voltages of the tapes are different. In this paper, a numerical model is developed to investigate the current and voltage sharing problem for the resistive SFCL. This model is able to simulate the dynamic response of YBCO tapes in normal and quench conditions. Firstly, four tapes with different Jc 's and n values in E-J power law are connected in parallel to carry the fault current. The model demonstrates how the currents are distributed among the four tapes. These four tapes are then connected in series to withstand the line voltage. In this case, the model investigates the voltage sharing between the tapes. Several factors that would affect the process of quenches are discussed including the field dependency of Jc, the magnetic coupling between the tapes and the relative positions of the tapes. © 2010 IEEE.

Directional algebraic reconstruction technique for electrical impedance tomography

We assume that the resistance matrix can be found in electrical impedance tomography from the assumption of linear dependence between the voltages and the currents and with the help of the resistance matrix and the transfer impedance between the electrodes, a directional algebraic reconstruction technique is proposed. The goal is to reconstruct the resistivity distribution by weighting the matrices that are obtained by calculating the orthogonal distance of the underlying mesh elements from the neighbouring port resistivity lines. These weighting matrices, which only depend on the topology of the underlying mesh, can be calculated offline and result in a computationally efficient online procedure with a reasonable image reconstruction performance. Simulation results are provided to validate this approach.

Thyristors

Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type material (i.e. three p-n junctions) comprising its main power handling section. In contrast to the linear relation which exists between load and control currents in a transistor, the thyristor is bistable. The control terminal of the thyristor, called the gate (G) electrode, may be connected to an integrated and complex structure as a part of the device. Thyristors are used to approximate ideal closed (no voltage drop between anode and cathode) or open (no anode current flow) switches for control of power flow in a circuit. This differs from low-level digital switching circuits that are designed to deliver two distinct small voltage levels while conducting small currents (ideally zero). Thyristor circuits must have the capability of delivering large currents and be able to withstand large externally applied voltages. All thyristor types are controllable in switching from a forward-lockingstate (positive potential applied to the anode with respect to the cathode, with correspondingly little anode current flow) into a forward-conduction state (large forward anode current flowing, with a small anode-cathode potential drop). Most thyristors have the characteristic that after switching from a forward-blocking state into the forward-conduction state, the gate signal can be removed and the thyristor will remain in its forward-conduction mode. This property is termed "latching" and is an important distinction between thyristors and other types of power electronic devices. © 2007 Elsevier Inc. All rights reserved.

Analysis of the mechanisms for impaired high-temperature, high-speed performance of 1.3 μm InGaAsP lasers

In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 °C to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modelling is found to accurately predict the trend of threshold currents over temperature. Using gain modelling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 °C indicate a reduction in RIN frequency to 63% of the 25 °C value which matches well with experimental small signal performance.

Field emission site densities of nanostructured carbon

The field emission properties of nanostructured carbon films deposited by cathodic vacuum arc in a He atmosphere have been studied by measuring the emission currents and the emission site density. The films have an onset field of ∼ 3 V/μm. The emission site density is viewed on a phosphor anode and it increases rapidly with applied field. It is assumed that the emission occurs from surface regions with a range of field enhancement factors but with a constant work function. The field enhancement factor is found to have an exponential distribution.

Grain boundaries in multi-seeded melt-grown superconductors

Future applications of high temperature superconductors require bulk materials of a complex shape. The multi-seeded-melt-growth process (MSMG) represents a promising technique for obtaining qualitatively well oriented bulk materials with different kinds of shape. In the MSMG process, several seeds are placed on a precursor pellet, from which the growth of the bulk starts. A certain problem of the MSMG process is that grain boundaries become inevitable when the growth fronts of two neighboring seeds collide. These grain boundaries are responsible for a reduction of the critical currents and pose a problem for high current applications. By polishing the sample step by step, the influence of the grain boundaries was investigated by scanning Hall probe measurements and by the magnetoscan technique. Additionally, optical microscopy and electron microscopy were employed to investigate the details of the microstructure. © 2005 IEEE.

Losses in inductor-less piezoelectric transformer ballast for compact fluorescent lamps

In this study an inductor-less piezoelectric transformer (PT) based ballast for a 5 W CFL has been designed and simulated. The predictions of circuit currents and losses closely match experimentally measured values. The total simulated loss figure was confirmed against practically determined losses using a precision mini-calorimeter. Using simulation to disaggregate the total loss figure, it is seen that the PT makes the largest contribution to the total losses in such ballast.

A finite element model of magnetization of superconducting bulks using a solid-state flux pump

Superconductors have a bright future; they are able to carry very high current densities, switch rapidly in electronic circuits, detect extremely small perturbations in magnetic fields, and sustain very high magnetic fields. Of most interest to large-scale electrical engineering applications are the ability to carry large currents and to provide large magnetic fields. There are many projects that use the first property, and these have concentrated on power generation, transmission, and utilization; however, there are relatively few, which are currently exploiting the ability to sustain high magnetic fields. The main reason for this is that high field wound magnets can and have been made from both BSCCO and YBCO, but currently, their cost is much higher than the alternative provided by low-Tc materials such as Nb3Sn and NbTi. An alternative form of the material is the bulk form, which can be magnetized to high fields. This paper explains the mechanism, which allows superconductors to be magnetized without the need for high field magnets to perform magnetization. A finite-element model is presented, which is based on the E-J current law. Results from this model show how magnetization of the superconductor builds up cycle upon cycle when a traveling magnetic wave is induced above the superconductor. © 2011 IEEE.

Correlation of transport and magnetic critical currents in melt-processed YBa2Cu3O7-δ thick films

Transport critical current measurements have been carried out on melt-processed thick films of YBa2Cu3O7-δ on yttria-stabilized zirconia in fields of up to 8 T both within grains and across grain boundaries. These measurements yield Jc values of ∼3000 A cm-2 at 4.2 K and zero magnetic field and 400 A cm -2 at 77 K and zero magnetic field, taking the entire sample width as the definitive dimension. Optical and scanning electron microscopy reveals that the thick-film grains consist typically of a central "hub" region ∼50 μm in diameter, which is well connected to radial subgrains or "spokes" which extend ∼1 mm to define the complete grain structure. Attempts have been made to correlate the transport measurements of inter- and intra-hub-and-spoke (H-S) critical current with values of this parameter derived previously from magnetization measurements. Analysis of the transport measurements indicates that current flow through H-S grains is constrained to paths along the spokes via the grain hub. Taking the size of the hub as the definitive dimension yields an intra-H-S grain Jc of ∼60 000 A cm-2 at 4.2 K and 0 T, which is in reasonable agreement with the magnetization data. Experiments in which the hub is removed from individual grains confirm that this feature determines critically the J c of the film.