Moderate energy impact analysis combining phenomenological contact law with localised damage and integral equation method

A computational impact analysis methodology has been developed, based on modal analysis and a local contact force-deflection model. The contact law is based on Hertz contact theory while contact stresses are elastic, defines a modified contact theory to take account of local permanent indentation, and considers elastic recovery during unloading. The model was validated experimentally through impact testing of glass-carbon hybrid braided composite panels. Specimens were mounted in a support frame and the contact force was inferred from the deceleration of the impactor, measured by high-speed photography. A Finite Element analysis of the panel and support frame assembly was performed to compute the modal responses. The new contact model performed well in predicting the peak forces and impact durations for moderate energy impacts (15 J), where contact stresses locally exceed the linear elastic limit and damage may be deemed to have occurred. C-scan measurements revealed substantial damage for impact energies in the range of 30-50 J. For this regime the new model predictions might be improved by characterisation of the contact law hysteresis during the unloading phase, and a modification of the elastic vibration response in line with damage levels acquired during the impact. © 2011 Elsevier Ltd. All rights reserved.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.