10 resultados para Cloud optical thickness

em Cambridge University Engineering Department Publications Database


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The movement of the circular piston in an oscillating piston positive displacement flowmeter is important in understanding the operation of the flowmeter, and the leakage of liquid past the piston plays a key role in the performance of the meter. The clearances between the piston and the chamber are small, typically less than 60 νm. In order to measure this film thickness a fluorescent dye was added to the water passing through the meter, which was illuminated with UV light. Visible light images were captured with a digital camera and analysed to give a measure of the film thickness with an uncertainty of less than 7%. It is known that this method lacks precision unless careful calibration is undertaken. Methods to achieve this are discussed in the paper. The grey level values for a range of film thicknesses were calibrated in situ with six dye concentrations to select the most appropriate one for the range of liquid film thickness. Data obtained for the oscillating piston flowmeter demonstrate the value of the fluorescence technique. The method is useful, inexpensive and straightforward and can be extended to other applications where measurement of liquid film thickness is required. © 2011 IOP Publishing Ltd.

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We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photo luminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. (c) 2006 Elsevier B.V. All rights reserved.

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Computer generated holography is an extremely demanding and complex task when it comes to providing realistic reconstructions with full parallax, occlusion, and shadowing. We present an algorithm designed for data-parallel computing on modern graphics processing units to alleviate the computational burden. We apply Gaussian interpolation to create a continuous surface representation from discrete input object points. The algorithm maintains a potential occluder list for each individual hologram plane sample to keep the number of visibility tests to a minimum.We experimented with two approximations that simplify and accelerate occlusion computation. It is observed that letting several neighboring hologramplane samples share visibility information on object points leads to significantly faster computation without causing noticeable artifacts in the reconstructed images. Computing a reduced sample set via nonuniform sampling is also found to be an effective acceleration technique. © 2009 Optical Society of America.

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This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

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We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.

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Hip fracture is the leading cause of acute orthopaedic hospital admission amongst the elderly, with around a third of patients not surviving one year post-fracture. Although various preventative therapies are available, patient selection is difficult. The current state-of-the-art risk assessment tool (FRAX) ignores focal structural defects, such as cortical bone thinning, a critical component in characterizing hip fragility. Cortical thickness can be measured using CT, but this is expensive and involves a significant radiation dose. Instead, Dual-Energy X-ray Absorptiometry (DXA) is currently the preferred imaging modality for assessing hip fracture risk and is used routinely in clinical practice. Our ambition is to develop a tool to measure cortical thickness using multi-view DXA instead of CT. In this initial study, we work with digitally reconstructed radiographs (DRRs) derived from CT data as a surrogate for DXA scans: this enables us to compare directly the thickness estimates with the gold standard CT results. Our approach involves a model-based femoral shape reconstruction followed by a data-driven algorithm to extract numerous cortical thickness point estimates. In a series of experiments on the shaft and trochanteric regions of 48 proximal femurs, we validated our algorithm and established its performance limits using 20 views in the range 0°-171°: estimation errors were 0:19 ± 0:53mm (mean +/- one standard deviation). In a more clinically viable protocol using four views in the range 0°-51°, where no other bony structures obstruct the projection of the femur, measurement errors were -0:07 ± 0:79 mm. © 2013 SPIE.

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GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE.

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The dithiophene donor-acceptor copolymers that are bridged either with carbon (C-PCPDTBT) or silicon atoms (Si-PCPDTBT) belong to a promising family of materials for use in photoactive layers for organic photovoltaic cells (OPVs). In this work, we implement the non-destructive Spectroscopic Ellipsometry technique in the near infrared to the far ultraviolet spectral region in combination with advanced theoretical modeling to investigate the vertical distribution of the C-PCPDTBT and Si-PCPDTBT polymer and fullerene ([6,6]-phenyl C71-butyric acid methyl ester - PC70BM) phases in the blend, as well as the effect of the polymer-to-fullerene ratio on the distribution mechanism. It was found that the C-PCPDTBT:PC70BM blends have donor-enriched top regions and acceptor-enriched bottom regions, whereas the donor and acceptor phases are more homogeneously intermixed in the Si-PCPDTBT:PC70BM blends. We suggest that the chemical incompatibility of the two phases as expressed by the difference in their surface energy, may be a key element in promoting the segregation of the lower surface phase to the top region of the photoactive layer. We found that the increase of the photoactive layer thickness reduces the polymer enrichment at the cathode, producing a more homogeneous phase distribution of donor and acceptor in the bulk that leads to the increase of the OPV efficiency. © 2014 Elsevier B.V.