Development of the 2003 CU-HTK conversational telephone speech transcription system

This paper describes the development of the 2003 CU-HTK large vocabulary speech recognition system for Conversational Telephone Speech (CTS). The system was designed based on a multi-pass, multi-branch structure where the output of all branches is combined using system combination. A number of advanced modelling techniques such as Speaker Adaptive Training, Heteroscedastic Linear Discriminant Analysis, Minimum Phone Error estimation and specially constructed Single Pronunciation dictionaries were employed. The effectiveness of each of these techniques and their potential contribution to the result of system combination was evaluated in the framework of a state-of-the-art LVCSR system with sophisticated adaptation. The final 2003 CU-HTK CTS system constructed from some of these models is described and its performance on the DARPA/NIST 2003 Rich Transcription (RT-03) evaluation test set is discussed.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.