A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Exploiting Chinese character models to improve speech recognition performance

The Chinese language is based on characters which are syllabic in nature. Since languages have syllabotactic rules which govern the construction of syllables and their allowed sequences, Chinese character sequence models can be used as a first level approximation of allowed syllable sequences. N-gram character sequence models were trained on 4.3 billion characters. Characters are used as a first level recognition unit with multiple pronunciations per character. For comparison the CU-HTK Mandarin word based system was used to recognize words which were then converted to character sequences. The character only system error rates for one best recognition were slightly worse than word based character recognition. However combining the two systems using log-linear combination gives better results than either system separately. An equally weighted combination gave consistent CER gains of 0.1-0.2% absolute over the word based standard system. Copyright © 2009 ISCA.

Comparative study of the slurry erosion and free-fall particle erosion of aluminum

A study has been performed of the erosion of aluminium by silica sand particles at a velocity of 4.5 m s-1, both air-borne and in the form of a water-borne slurry. Measurements made under similar experimental conditions show that slurry erosion proceeds at a rate several times that of air-borne erosion, the ratio of the two rates depending strongly on the angle of impact. Sand particles become embedded into the metal surface during air-borne particle erosion, forming a composite layer of metal and silica, and provide the major cause of the difference in wear rate. The embedded particles giving rise to surface hardening and a significant reduction in the erosion rate. Embedment of erodent particles was not observed during slurry erosion. Lubrication of the impacting interfaces by water appears to have minimal effect on the wear of aluminium by slurry erosion.