Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics

We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

Characterising the neutron and gamma responses of the NPL liquid scintillation detectors.

The absolute responses of the NPL liquid scintillation spectrometers to monoenergetic neutrons and gammas were measured at various energies in the ranges 1.2 - 17 MeV approximately for neutrons and 0.28 - 1.8 MeV for gammas. Additional measurements of the proton light output function were also carried out. Calculated responses were then obtained for the larger detector using the programs NRESP7 and PHRESP, and compared with the absolute measurements. Finally, response matrices for this detector were generated using responses calculated at closely spaced energies.

A performance evaluation of volumetric 3D interest point detectors

This paper presents the first performance evaluation of interest points on scalar volumetric data. Such data encodes 3D shape, a fundamental property of objects. The use of another such property, texture (i.e. 2D surface colouration), or appearance, for object detection, recognition and registration has been well studied; 3D shape less so. However, the increasing prevalence of 3D shape acquisition techniques and the diminishing returns to be had from appearance alone have seen a surge in 3D shape-based methods. In this work, we investigate the performance of several state of the art interest points detectors in volumetric data, in terms of repeatability, number and nature of interest points. Such methods form the first step in many shape-based applications. Our detailed comparison, with both quantitative and qualitative measures on synthetic and real 3D data, both point-based and volumetric, aids readers in selecting a method suitable for their application. © 2012 Springer Science+Business Media, LLC.

Model for quantum efficiency of guided mode plasmonic enhanced silicon Schottky detectors

Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency.

Room temperature single-photon detectors for high bit rate quantum key distribution

We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances. © 2014 AIP Publishing LLC.