Model development & application for inland navigational canals

Several agencies in the United Kingdom have interest in the water quality of old navigational canals that have fallen into disuse after the decline of commercial canal transportation. The interested agencies desired a model to predict the water quantity and quality of inland navigational canals in order to evaluate management options to address the issues in the natural streams to which they discharge. Inland navigational canals have unique drivers of their hydrology and water quality compared to either natural streams, irrigation canals, or larger navigational canals connected to seas or oceans. Water in an inland canal is typically sourced from a reservoir and artificially pumped to a summit reach; its movement downhill is controlled by the activity of boats and overflow weirs. Stagnant impoundments between locks, which might normally be expected to result in a decrease in the concentration of sediment-associated pollutants, actually have surprisingly high levels of sediment due to boat traffic. Algal growth in the stagnant reach can be high. This paper describes a canal model developed to simulate hydrology and water quality in inland navigational canals. This model was successfully applied to the Kennet and Avon Canal to predict hydrology, sediment generation and transport, and algal growth and transport. The model is responsive to external influences such as sunlight, temperature, nutrient concentrations, boat traffic, and runoff from the contributing catchment area.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Reconfigurable free-space optical switching technologies for storage area networks

Reconfigurable shutter-based free-space optical switching technologies using fiber ribbon and multiple wavelengths per fiber for Storage Area Networks (SANs) application are presented and demonstrated. ©2009 SPIE-OSA-IEEE.

Reconfigurable free-space optical switching technologies for storage area networks

Reconfigurable shutter-based free-space optical switching technologies using fiber ribbon and multiple wavelengths per fiber for Storage Area Networks (SANs) application are presented and demonstrated. ©2009 Optical Society of America.