Assessment of the settlement vulnerability of masonry buildings

Excavation works in urban areas require a preliminary risk damage assessment. In historical cities, the prediction of building response to settlements is necessary to reduce the risk of damage of the architectural heritage. The current method used to predict the building damage due to ground deformations is the Limiting Tensile Strain Method (LTSM). In this approach the building is modelled as an elastic beam subjected to imposed Greenfield settlements and the induced tensile strains are compared with a limit value for the material. These assumptions can lead to a non realistic evaluation of the damage. In this paper, the possibility to apply a settlement risk assessment derived from the seismic vulnerability approach is considered. The parameters that influence the structural response to settlements can be defined through numerical analyses which take into account the nonlinear behaviour of masonry and the soil-structure interaction. The effects of factors like material quality, geometry of the structure, amount of openings, type of foundation or the actual state of preservation can be included in a global vulnerability index, which should indicate the building susceptibility to damage by differential settlements of a given magnitude. Vulnerability curves will represent the expected damage of each vulnerability class of building as a function of the settlement.

Design and coupled-effect simulations of CMOS micro gas-sensors built on SOI thin membranes

This paper describes coupled-effect simulations of smart micro gas-sensors based on standard BiCMOS technology. The smart sensor features very low power consumption, high sensitivity and potential low fabrication cost achieved through full CMOS integration. For the first time the micro heaters are made of active CMOS elements (i.e. MOSFET transistors) and embedded in a thin SOI membrane consisting of Si and SiO2 thin layers. Micro gas-sensors such as chemoresistive, microcalorimeteric and Pd/polymer gate FET sensors can be made using this technology. Full numerical analyses including 3D electro-thermo-mechanical simulations, in particular stress and deflection studies on the SOI membranes are presented. The transducer circuit design and the post-CMOS fabrication process, which includes single sided back-etching, are also reported.