9 resultados para Broad bean stain virus

em Cambridge University Engineering Department Publications Database


Relevância:

20.00% 20.00%

Publicador:

Resumo:

Tunable materials with high anisotropy of refractive index and low loss are of particular interest in the microwave and terahertz range. Nematic liquid crystals are highly sensitive to electric and magnetic fields and may be designed to have particularly high birefringence. In this paper we investigate birefringence and absorption losses in an isothiocyanate based liquid crystal (designed for high anisotropy) in a broad range of the electromagnetic spectrum, namely 0.1-4 GHz, 30 GHz, 0.5-1.8 THz, and in the visible and near-infrared region (400 nm-1600 nm). We report high birefringence (Δn = 0.19-0.395) and low loss in this material. This is attractive for tunable microwave and terahertz device applications.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The laser-diode parameters at which the steady-state regime of generation becomes unstable are analyzed within the framework of the mode-locking model. The crucial role of the transverse inhomogeneity of the field, pumping intensity, and spectrum width in developing the instabilities of the steady-state regime of generation is demonstrated. The calculated values of the instability threshold are shown to be consistent with the experimental results. © 2008 Springer Science+Business Media, Inc.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Experimental demonstration of lasing in a broad area twin-contact semiconductor laser which operates as a phase-conjugation (PC) mirror in an external cavity configuration is reported. This allows "self-aligned" and self-pumped spatially nondegenerate four-wave mixing to be achieved without the need for external optical signals. The external cavity laser system is very insensitive to tilt misalignments of the external mirror in the PC regime and exhibits very good mechanical stability. The resonant frequency of the external cavity lies in the GHz range which corresponds to a subnanosecond time response of phase conjugation processes in the semiconductor laser. © 1997 American Institute of Physics.